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Superconductor-nanowire devices from tunneling to the multichannel regime: Zero-bias oscillations and magnetoconductance crossoverGold-free ternary III-V antimonide nanowire arrays on silicon: twin-free down to the first bilayer.Nanowire biocompatibility in the brain--looking for a needle in a 3D stack.Anomalous zero-bias conductance peak in a Nb-InSb nanowire-Nb hybrid device.Parity independence of the zero-bias conductance peak in a nanowire based topological superconductor-quantum dot hybrid device.Selective-area epitaxy of pure wurtzite InP nanowires: high quantum efficiency and room-temperature lasing.In(x)Ga(1-x)As nanowires with uniform composition, pure wurtzite crystal phase and taper-free morphology.Coherent Charge Transport in Ballistic InSb Nanowire Josephson Junctions.Doping-enhanced radiative efficiency enables lasing in unpassivated GaAs nanowiresMetal-seeded growth of III-V semiconductor nanowires: towards gold-free synthesis.Controlling the morphology, composition and crystal structure in gold-seeded GaAs(1-x)Sb(x) nanowires.Nanowires grown on InP (100): growth directions, facets, crystal structures, and relative yield control.Crystal phase engineering in single InAs nanowires.Self-Equilibration of the Diameter of Ga-Catalyzed GaAs Nanowires.Persistent enhancement of the carrier density in electron irradiated InAs nanowires.Understanding the growth and composition evolution of gold-seeded ternary InGaAs nanowires.Atomic scale strain relaxation in axial semiconductor III-V nanowire heterostructures.Editorial-Focus on inorganic semiconductor nanowires for device applications.InP-InxGa1-xAs core-multi-shell nanowire quantum wells with tunable emission in the 1.3-1.55 μm wavelength range.Raman spectroscopy of self-catalyzed GaAs(1-x)Sb(x) nanowires grown on silicon.Simultaneous Selective-Area and Vapor-Liquid-Solid Growth of InP Nanowire Arrays.Twin-Induced InSb Nanosails: A Convenient High Mobility Quantum System.Room temperature GaAsSb single nanowire infrared photodetectors.Tunable Polarity in a III-V Nanowire by Droplet Wetting and Surface Energy Engineering.Supercurrent and multiple Andreev reflections in an InSb nanowire Josephson junction.The effect of nitridation on the polarity and optical properties of GaN self-assembled nanorodsStrong Amplified Spontaneous Emission from High Quality GaAs1–xSbx Single Quantum Well Nanowires0−π phase transition in hybrid superconductor–InSb nanowire quantum dot devicesBallistic transport and quantum interference in InSb nanowire devicesGrowth and optical properties of In x Ga1−x P nanowires synthesized by selective-area epitaxyLazarevicite-type short-range ordering in ternary III-V nanowiresAntimony Induced {112}A Faceted Triangular GaAs1−xSbx/InP Core/Shell Nanowires and Their Enhanced Optical QualityFormation of long single quantum dots in high quality InSb nanowires grown by molecular beam epitaxyTunnel junctions in a III–V nanowire by surface engineeringType I band alignment in GaAs81Sb19/GaAs core-shell nanowiresZn3As2 Nanowires and Nanoplatelets: Highly Efficient Infrared Emission and Photodetection by an Earth Abundant MaterialInP-based radial heterostructures grown on [100] nanowiresMagnetotransport Subband Spectroscopy in InAs NanowiresMorphology and composition controlled GaxIn1−xSb nanowires: understanding ternary antimonide growthTime-Resolved X-ray Diffraction Investigation of the Modified Phonon Dispersion in InSb Nanowires
P50
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P50
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Forscher
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Philippe Caroff
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P106
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P1960
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P21
P31
P496
0000-0003-0160-1572