Position-dependent stochastic diffusion model of ion channel gating.
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Voltage dependence of Hodgkin-Huxley rate functions for a multistage K^{+} channel voltage sensor within a membrane.Voltage dependence of a stochastic model of activation of an alpha helical S4 sensor in a K channel membrane.Stochastic diffusion model of multistep activation in a voltage-dependent K channel.
P2860
Position-dependent stochastic diffusion model of ion channel gating.
description
2008 nî lūn-bûn
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name
Position-dependent stochastic diffusion model of ion channel gating.
@en
Position-dependent stochastic diffusion model of ion channel gating.
@nl
type
label
Position-dependent stochastic diffusion model of ion channel gating.
@en
Position-dependent stochastic diffusion model of ion channel gating.
@nl
prefLabel
Position-dependent stochastic diffusion model of ion channel gating.
@en
Position-dependent stochastic diffusion model of ion channel gating.
@nl
P2860
P1433
P1476
Position-dependent stochastic diffusion model of ion channel gating.
@en
P2093
Vaccaro SR
P2860
P304
P356
10.1103/PHYSREVE.78.061915
P407
P433
P577
2008-12-17T00:00:00Z