Linear scaling calculation of band edge states and doped semiconductors.
about
DCMB that combines divide-and-conquer and mixed-basis set methods for accurate geometry optimizations, total energies, and vibrational frequencies of large molecules.Computation of interior eigenvalues in electronic structure calculations facilitated by density matrix purification.Density matrix purification with rigorous error control.HONPAS: A linear scaling open-source solution for large system simulationsLinear scaling electronic structure calculations with numerical atomic basis set
P2860
Linear scaling calculation of band edge states and doped semiconductors.
description
2007 nî lūn-bûn
@nan
2007年の論文
@ja
2007年学术文章
@wuu
2007年学术文章
@zh
2007年学术文章
@zh-cn
2007年学术文章
@zh-hans
2007年学术文章
@zh-my
2007年学术文章
@zh-sg
2007年學術文章
@yue
2007年學術文章
@zh-hant
name
Linear scaling calculation of band edge states and doped semiconductors.
@en
Linear scaling calculation of band edge states and doped semiconductors.
@nl
type
label
Linear scaling calculation of band edge states and doped semiconductors.
@en
Linear scaling calculation of band edge states and doped semiconductors.
@nl
prefLabel
Linear scaling calculation of band edge states and doped semiconductors.
@en
Linear scaling calculation of band edge states and doped semiconductors.
@nl
P2093
P2860
P356
P1476
Linear scaling calculation of band edge states and doped semiconductors.
@en
P2093
Jinlong Yang
Qingshi Zhu
P2860
P304
P356
10.1063/1.2746322
P407
P577
2007-06-01T00:00:00Z
P5875
P698
P818
cond-mat/0611493