Electrical manipulation of nanofilaments in transition-metal oxides for resistance-based memory.
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Highly Stretchable Non-volatile Nylon Thread MemoryA fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structuresIdentification of ground-state spin ordering in antiferromagnetic transition metal oxides using the Ising model and a genetic algorithmEnhanced stability of filament-type resistive switching by interface engineeringCoexistence of memory resistance and memory capacitance in TiO2 solid-state devices.Resistive switching of Au/ZnO/Au resistive memory: an in situ observation of conductive bridge formationIn situ observation of filamentary conducting channels in an asymmetric Ta₂O5-x/TaO2-x bilayer structure.Ultra-flexible nonvolatile memory based on donor-acceptor diketopyrrolopyrrole polymer blendsEnhancement of resistive switching under confined current path distribution enabled by insertion of atomically thin defective monolayer graphene.All oxide semiconductor-based bidirectional vertical p-n-p selectors for 3D stackable crossbar-array electronicsDeterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation.Terahertz spin-wave waveguides and optical magnonics in one-dimensional NiO nanorods.MoS2 memristor with photoresistive switching.An efficient methodology for measurement of the average electrical properties of single one-dimensional NiO nanorods.Spin memristive magnetic tunnel junctions with CoO-ZnO nano composite barrier.Finding Oxygen Reservoir by Using Extremely Small Test Cell Structure for Resistive Random Access Memory with Replaceable Bottom Electrode.Plasmon-induced nanoscale quantised conductance filaments.Bipolar resistive switching in p-type Co3O4 nanosheets prepared by electrochemical deposition.A plasma-treated chalcogenide switch device for stackable scalable 3D nanoscale memory.Resistance Switching and Memristive Hysteresis in Visible-Light-Activated Adsorbed ZnO Thin Films.Ternary Flexible Electro-resistive Memory Device based on Small Molecules.Competitive effects of oxygen vacancy formation and interfacial oxidation on an ultra-thin HfO2-based resistive switching memory: beyond filament and charge hopping models.Evolution of Ni nanofilaments and electromagnetic coupling in the resistive switching of NiO.Device and SPICE modeling of RRAM devices.Oxide double-layer nanocrossbar for ultrahigh-density bipolar resistive memory.Scaling behaviors of the voltage distribution in dielectric breakdown networks.Scaling theory for unipolar resistance switching.Confining grains of textured Cu2O films to single-crystal nanowires and resultant change in resistive switching characteristics.Multi-level control of conductive nano-filament evolution in HfO2 ReRAM by pulse-train operations.Large Area Synthesis of Vertical Aligned Metal Oxide Nanosheets by Thermal Oxidation of Stainless Steel Mesh and Foil.Enhanced oxygen vacancy diffusion in Ta2O5 resistive memory devices due to infinitely adaptive crystal structureCharacteristics of p-NiO Thin Films Prepared by Spray Pyrolysis and Their Application in CdS-sensitized PhotocathodesImprovement of resistive switching in NiO-based nanowires by inserting Pt layersTo probe the performance of perovskite memory devices: defects property and hysteresisA simple, room temperature, solid-state synthesis route for metal oxide nanostructures
P2860
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P2860
Electrical manipulation of nanofilaments in transition-metal oxides for resistance-based memory.
description
2009 nî lūn-bûn
@nan
2009年の論文
@ja
2009年学术文章
@wuu
2009年学术文章
@zh
2009年学术文章
@zh-cn
2009年学术文章
@zh-hans
2009年学术文章
@zh-my
2009年学术文章
@zh-sg
2009年學術文章
@yue
2009年學術文章
@zh-hant
name
Electrical manipulation of nan ...... s for resistance-based memory.
@en
Electrical manipulation of nan ...... s for resistance-based memory.
@nl
type
label
Electrical manipulation of nan ...... s for resistance-based memory.
@en
Electrical manipulation of nan ...... s for resistance-based memory.
@nl
prefLabel
Electrical manipulation of nan ...... s for resistance-based memory.
@en
Electrical manipulation of nan ...... s for resistance-based memory.
@nl
P2093
P356
P1433
P1476
Electrical manipulation of nan ...... s for resistance-based memory.
@en
P2093
Bae Ho Park
Bo Soo Kang
Chang Bum Lee
Chang Jung Kim
David H Seo
In-Kyeong Yoo
Jong-Bong Park
Jung-Hyun Lee
Ki Hwan Kim
Myoung-Jae Lee
P304
P356
10.1021/NL803387Q
P407
P577
2009-04-01T00:00:00Z