Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature.

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Water Splits To Degrade Two-Dimensional Group-IV Monochalcogenides in Nanoseconds

P2860

Q58564565-9AB1C31C-9405-4FC2-AEA5-53C1B8A4A4BB

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Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature.

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2018 nî lūn-bûn

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2018年の論文

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2018年学术文章

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2018年学术文章

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2018年学术文章

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2018年學術文章

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Accessing valley degree of freedom in bulk Tin

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Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature.

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Item

label

Accessing valley degree of freedom in bulk Tin

@nl

Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature.

@en

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Accessing valley degree of freedom in bulk Tin

@nl

Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature.

@en

P1476

Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature

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P2093

Alexandra Carvalho

http://www.w3.org/2001/XMLSchema#string

Emory M Chan

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Jie Yao

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Lídia Carvalho

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Roger Li

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Shancheng Yan

http://www.w3.org/2001/XMLSchema#string

Shuren Lin

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Sujung Kim

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Xi Wang

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P2860

Generalized Gradient Approximation Made Simple

Coupled Spin and Valley Physics in Monolayers of MoS 2 and Other Group-VI Dichalcogenides

QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials

Anomalously robust valley polarization and valley coherence in bilayer WS2

Control of valley polarization in monolayer MoS2 by optical helicity.

Valley polarization in MoS2 monolayers by optical pumping.

Physical vapor deposition synthesis of two-dimensional orthorhombic SnS flakes with strong angle/temperature-dependent Raman responses.

Electrical generation and control of the valley carriers in a monolayer transition metal dichalcogenide.

In-Plane Anisotropies of Polarized Raman Response and Electrical Conductivity in Layered Tin Selenide.

Two-Dimensional SnS: A Phosphorene Analogue with Strong In-Plane Electronic Anisotropy.

P2888

s41467-018-03897-3

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1455

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scholarly article

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10.1038/S41467-018-03897-3

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P407

English

P433

http://www.w3.org/2001/XMLSchema#string

P478

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P50

Antonio H. Castro Neto

A S Rodin

P577

2018-04-13T00:00:00Z

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P698

29654301

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P932

5899090

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Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature.

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P2860

P2860

Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature.

description

name

type

label

prefLabel

P1433

P1476

P2093

P2860

P2888

P304

P31

P356

P407

P433

P478

P50

P577

P698

P932

P356

P1433

P1476

P2093

P2860

P2888

P304

P31

P356

P407

P433

P478

P50

P577

P698

P932