p-i-n Homojunction in organic light-emitting transistors.
about
Current-confinement structure and extremely high current density in organic light-emitting transistors.Outlook and emerging semiconducting materials for ambipolar transistors.Ambipolar light-emitting organic single-crystal transistors with a grating resonator.Intrinsic Polarization and Tunable Color of Electroluminescence from Organic Single Crystal-based Light-Emitting Devices.Surface Lattice Resonances for Enhanced and Directional Electroluminescence at High Current DensitiesRecent progress in photoactive organic field-effect transistorsEndeavor of Iontronics: From Fundamentals to Applications of Ion-Controlled Electronics.Organic Light-Emitting Transistors: Materials, Device Configurations, and Operations.On-Demand Coupling of Electrically Generated Excitons with Surface Plasmons via Voltage-Controlled Emission Zone PositionOrganic single-crystal light-emitting transistor coupling with optical feedback resonators.Control of efficiency, brightness, and recombination zone in light-emitting field effect transistors.Maximizing field-effect mobility and solid-state luminescence in organic semiconductors.Simultaneous enhancement of brightness, efficiency, and switching in RGB organic light emitting transistors.Systematic control of the excited-state dynamics and carrier-transport properties of functionalized benzo[ghi]perylene and coronene derivatives.Electrically switchable chiral light-emitting transistor.Fluorescence color change of aggregation-induced emission of 4-[bis(4-methylphenyl)amino]benzaldehyde.Organic single-crystal light-emitting field-effect transistorsThe pursuit of electrically-driven organic semiconductor lasersLow Driving Voltage and High Mobility Ambipolar Field-Effect Transistors with PbS Colloidal NanocrystalsSingle crystal biphenyl end-capped furan-incorporated oligomers: influence of unusual packing structure on carrier mobility and luminescenceMapping Charge-Carrier Density Across the p-n Junction in Ambipolar Carbon-Nanotube Networks by Raman MicroscopyRecent Trends in Light-Emitting Organic Field-Effect Transistors
P2860
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P2860
p-i-n Homojunction in organic light-emitting transistors.
description
2011 nî lūn-bûn
@nan
2011年の論文
@ja
2011年学术文章
@wuu
2011年学术文章
@zh
2011年学术文章
@zh-cn
2011年学术文章
@zh-hans
2011年学术文章
@zh-my
2011年学术文章
@zh-sg
2011年學術文章
@yue
2011年學術文章
@zh-hant
name
p-i-n Homojunction in organic light-emitting transistors.
@en
p-i-n Homojunction in organic light-emitting transistors.
@nl
type
label
p-i-n Homojunction in organic light-emitting transistors.
@en
p-i-n Homojunction in organic light-emitting transistors.
@nl
prefLabel
p-i-n Homojunction in organic light-emitting transistors.
@en
p-i-n Homojunction in organic light-emitting transistors.
@nl
P2093
P2860
P356
P1433
P1476
p-i-n Homojunction in organic light-emitting transistors
@en
P2093
Kosuke Sawabe
Satoshi Tsuda
Taishi Takenobu
Takeshi Yamao
Yohei Yomogida
Yoshihiro Iwasa
P2860
P304
P356
10.1002/ADMA.201004572
P407
P577
2011-05-24T00:00:00Z