Bias-dependent imaging of the In-terminated InAs(001) (4 x 2)/c(8 x 2) surface by STM: Reconstruction and transitional defect.
about
Initiation of a passivated interface between hafnium oxide and In(Ga)As(0 0 1)-(4x2).Atomic imaging of the monolayer nucleation and unpinning of a compound semiconductor surface during atomic layer deposition.Scanning tunneling microscopy/spectroscopy study of atomic and electronic structures of In2O on InAs and In0.53Ga0.47As(001)-(4×2) surfaces.Doping Nature of Native Defects in1T−TiSe2
P2860
Bias-dependent imaging of the In-terminated InAs(001) (4 x 2)/c(8 x 2) surface by STM: Reconstruction and transitional defect.
description
1996 nî lūn-bûn
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1996年の論文
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1996年学术文章
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1996年学术文章
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1996年学术文章
@zh-cn
1996年学术文章
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1996年学术文章
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1996年学术文章
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1996年學術文章
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1996年學術文章
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name
Bias-dependent imaging of the In-terminated InAs
@nl
Bias-dependent imaging of the ...... ction and transitional defect.
@en
type
label
Bias-dependent imaging of the In-terminated InAs
@nl
Bias-dependent imaging of the ...... ction and transitional defect.
@en
prefLabel
Bias-dependent imaging of the In-terminated InAs
@nl
Bias-dependent imaging of the ...... ction and transitional defect.
@en
P2093
P1433
P1476
Bias-dependent imaging of the ...... ction and transitional defect.
@en
P2093
P304
17877-17883
P356
10.1103/PHYSREVB.54.17877
P407
P577
1996-12-01T00:00:00Z