Gate-induced carrier delocalization in quantum dot field effect transistors.
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Size-Dependent Melting Behavior of Colloidal In, Sn, and Bi Nanocrystals.Charge transport in strongly coupled quantum dot solids.Metallic-like bonding in plasma-born silicon nanocrystals for nanoscale bandgap engineering.Conductance based characterization of structure and hopping site density in 2D molecule-nanoparticle arrays.Observation of carrier localization in cubic crystalline Ge2Sb2Te5 by field effect measurement.Metal-insulator transition in films of doped semiconductor nanocrystals.
P2860
Gate-induced carrier delocalization in quantum dot field effect transistors.
description
2014 nî lūn-bûn
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2014年の論文
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2014年学术文章
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2014年学术文章
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2014年学术文章
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2014年学术文章
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2014年学术文章
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2014年學術文章
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2014年學術文章
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name
Gate-induced carrier delocalization in quantum dot field effect transistors.
@en
Gate-induced carrier delocalization in quantum dot field effect transistors.
@nl
type
label
Gate-induced carrier delocalization in quantum dot field effect transistors.
@en
Gate-induced carrier delocalization in quantum dot field effect transistors.
@nl
prefLabel
Gate-induced carrier delocalization in quantum dot field effect transistors.
@en
Gate-induced carrier delocalization in quantum dot field effect transistors.
@nl
P2093
P50
P356
P1433
P1476
Gate-induced carrier delocalization in quantum dot field effect transistors.
@en
P2093
Benjamin T Diroll
Cherie R Kagan
Christopher B Murray
James M Kikkawa
Ji-Hyuk Choi
P304
P356
10.1021/NL5029655
P407
P577
2014-09-09T00:00:00Z