about
Chemically Isolated Graphene Nanoribbons Reversibly Formed in Fluorographene Using Polymer Nanowire MasksModifying Surface Energy of Graphene via Plasma-Based Chemical Functionalization to Tune Thermal and Electrical Transport at Metal Interfaces.Manipulating thermal conductance at metal-graphene contacts via chemical functionalization.van der Waals screening by single-layer graphene and molybdenum disulfide.Direct mechanochemical cleavage of functional groups from graphene.Graphene Strained by Defects.Fabrication, optimization, and use of graphene field effect sensors.Reduced graphene oxide molecular sensors.Wafer-scale reduced graphene oxide films for nanomechanical devices.Properties of fluorinated graphene films.Engineering graphene mechanical systems.Electrical detection of charge-current-induced spin polarization due to spin-momentum locking in Bi2Se3.Ge island assembly on metal-patterned Si: truncated pyramids, nanorods, and beyond.High-density amine-terminated monolayers formed on fluorinated CVD-grown graphene.Electronic hybridization of large-area stacked graphene films.Metal-induced assembly of a semiconductor island lattice: Ge truncated pyramids on Au-patterned Si.Gold-catalyzed oxide nanopatterns for the directed assembly of Ge island arrays on Si.Work Function Variations in Twisted Graphene Layers.Fluorinated Graphene Enables the Growth of Inorganic Thin Films by Chemical Bath Deposition on Otherwise Inert Substrates.Protection from Below: Stabilizing Hydrogenated Graphene Using Graphene Underlayers.Enhancing the stiffness of vertical graphene sheets through ion beam irradiation and fluorination.Low-resistance spin injection into silicon using graphene tunnel barriers.Graphene as a tunnel barrier: graphene-based magnetic tunnel junctions.Sculpting semiconductor heteroepitaxial islands: from dots to rods.Nitrogen-Doped Graphene and Twisted Bilayer Graphene via Hyperthermal Ion Implantation with Depth Control.Transfer of Chemically Modified Graphene with Retention of Functionality for Surface Engineering.Hydrogenated Graphene as a Homoepitaxial Tunnel Barrier for Spin and Charge Transport in Graphene.Spin transport and Hanle effect in silicon nanowires using graphene tunnel barriers.Atomically thin heterostructures based on single-layer tungsten diselenide and graphene.Fluorination of graphene enhances friction due to increased corrugation.Rotational disorder in twisted bilayer grapheneGlobal faceting behavior of strained Ge islands on SiEvidence for Interlayer Coupling and Moiré Periodic Potentials in Twisted Bilayer GrapheneHigh-quality uniform dry transfer of graphene to polymersShear modulus of monolayer graphene prepared by chemical vapor depositionEffects of molecular adsorption on the electronic structure of single-layer graphenePatterning magnetic regions in hydrogenated graphene via e-beam irradiationHomoepitaxial tunnel barriers with functionalized graphene-on-graphene for charge and spin transportChemistries for Making Additive Nanolithography in OrmoComp Permissive for Cell Adhesion and GrowthDirect observation of minibands in a twisted graphene/WS2 bilayer
P50
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P50
description
onderzoeker
@nl
researcher
@en
հետազոտող
@hy
name
Jeremy T Robinson
@nl
Jeremy T Robinson
@sl
Jeremy T. Robinson
@en
Jeremy T. Robinson
@es
type
label
Jeremy T Robinson
@nl
Jeremy T Robinson
@sl
Jeremy T. Robinson
@en
Jeremy T. Robinson
@es
prefLabel
Jeremy T Robinson
@nl
Jeremy T Robinson
@sl
Jeremy T. Robinson
@en
Jeremy T. Robinson
@es
P106
P1153
8328923400
P31
P496
0000-0001-8702-2680