Mesoscale imperfections in MoS2 atomic layers grown by a vapor transport technique.
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Toward air-stable multilayer phosphorene thin-films and transistors.Uncovering edge states and electrical inhomogeneity in MoS2 field-effect transistors.Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects.Transition metal dichalcogenide growth via close proximity precursor supply.Sub-picomolar label-free detection of thrombin using electrochemical impedance spectroscopy of aptamer-functionalized MoS2.Humate-assisted Synthesis of MoS2/C Nanocomposites via Co-Precipitation/Calcination Route for High Performance Lithium Ion Batteries.
P2860
Mesoscale imperfections in MoS2 atomic layers grown by a vapor transport technique.
description
2014 nî lūn-bûn
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2014年の論文
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2014年学术文章
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2014年学术文章
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2014年学术文章
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2014年学术文章
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name
Mesoscale imperfections in MoS2 atomic layers grown by a vapor transport technique.
@en
Mesoscale imperfections in MoS2 atomic layers grown by a vapor transport technique.
@nl
type
label
Mesoscale imperfections in MoS2 atomic layers grown by a vapor transport technique.
@en
Mesoscale imperfections in MoS2 atomic layers grown by a vapor transport technique.
@nl
prefLabel
Mesoscale imperfections in MoS2 atomic layers grown by a vapor transport technique.
@en
Mesoscale imperfections in MoS2 atomic layers grown by a vapor transport technique.
@nl
P2093
P356
P1433
P1476
Mesoscale imperfections in MoS2 atomic layers grown by a vapor transport technique
@en
P2093
Ariel Ismach
Rodney Ruoff
Rudresh Ghosh
Yingnan Liu
P304
P356
10.1021/NL501782E
P407
P50
P577
2014-07-16T00:00:00Z