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A comprehensive review of semiconductor ultraviolet photodetectors: from thin film to one-dimensional nanostructuresPhages recognizing the Indium Nitride semiconductor surface via their peptides.Determination of the surface band bending in In x Ga1-x N films by hard x-ray photoemission spectroscopySurface Stability and Growth Kinetics of Compound Semiconductors: An Ab Initio-Based Approach.Quantitative parameters for the examination of InGaN QW multilayers by low-loss EELS.Determination of the energy band gap of Bi2Se3Structural and optoelectronic characterization of RF sputtered ZnSnN(2).Long-range and short-range structures of cube-like shape SrTiO3 powders: microwave-assisted hydrothermal synthesis and photocatalytic activity.A multilevel intermediate-band solar cell by InGaN/GaN quantum dots with a strain-modulated structure.Microstructural characterization of high indium-composition InXGa₁-XN epilayers grown on c-plane sapphire substrates.Near infrared electroluminescence of ZnMgO/InN core-shell nanorod heterostructures grown on Si substrate.Nanogenerators based on vertically aligned InN nanowires.A hard oxide semiconductor with a direct and narrow bandgap and switchable p-n electrical conduction.Oxygen mediated synthesis of high quality InN nanowires above their decomposition temperature.Hybrid functional calculations of native point defects in InNPolarization-Driven Topological Insulator Transition in aGaN/InN/GaNQuantum WellReconstructions and origin of surface states on AlN polar and nonpolar surfacesSources of unintentional conductivity in InNEffects of cationdstates on the structural and electronic properties of III-nitride and II-oxide wide-band-gap semiconductorsShallow donor state of hydrogen in indium nitrideNitrogen-rich indium nitrideGrowth modes in heteroepitaxy of InGaN on GaNMATERIALS PROPERTIES OF NITRIDES: SUMMARYElectron transport in wurtzite InNSuperconductivity in heavily compensated Mg-doped InNElectron cyclotron effective mass in indium nitrideEnhancing structural transition by carrier and quantum confinement: Stabilization of cubic InN quantum dots by Mn incorporationStrain and compositional fluctuations in Al0.81In0.19N/GaN heterostructuresIntrinsic electronic properties of high-quality wurtzite InNProgress in Indium Gallium Nitride Materials for Solar Photovoltaic Energy ConversionGrowth of InN and In-Rich InGaN Layers on GaN Templates by Pulsed Metalorganic Chemical Vapor DepositionStructural changes during the natural aging process of InN quantum dotsConfiguration of the misfit dislocation networks in uncapped and capped InN quantum dotsGrowth of very large InN microcrystals by molecular beam epitaxy using epitaxial lateral overgrowthLow-temperature photoluminescence studies of In-rich InAlN nanocolumnsPhotoluminescence properties of selectively grown InN microcrystalsEpitaxial lateral overgrowth of InN by rf-plasma-assisted molecular-beam epitaxyDislocation reduction via selective-area growth of InN accompanied by lateral growth by rf-plasma-assisted molecular-beam epitaxyMolecular-beam epitaxial growth and characterization of quaternary III–nitride compoundsAuger recombination as the dominant nonradiative recombination channel in InN
P2860
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P2860
description
article
@en
im Mai 2002 veröffentlichter wissenschaftlicher Artikel
@de
wetenschappelijk artikel
@nl
наукова стаття, опублікована в травні 2002
@uk
ലേഖനം
@ml
name
Unusual properties of the fundamental band gap of InN
@en
Unusual properties of the fundamental band gap of InN
@nl
type
label
Unusual properties of the fundamental band gap of InN
@en
Unusual properties of the fundamental band gap of InN
@nl
prefLabel
Unusual properties of the fundamental band gap of InN
@en
Unusual properties of the fundamental band gap of InN
@nl
P2093
P356
P1476
Unusual properties of the fundamental band gap of InN
@en
P2093
E. E. Haller
J. W. Ager
W. Walukiewicz
William J. Schaff
Yasushi Nanishi
Yoshiki Saito
P304
P356
10.1063/1.1482786
P407
P50
P577
2002-05-27T00:00:00Z