Development of Ordered, Porous (Sub-25 nm Dimensions) Surface Membrane Structures Using a Block Copolymer Approach.

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Development of Ordered, Porous (Sub-25 nm Dimensions) Surface Membrane Structures Using a Block Copolymer Approach.

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2018 nî lūn-bûn

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2018年の論文

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2018年学术文章

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2018年学术文章

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2018年学术文章

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2018年学术文章

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2018年學術文章

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2018年學術文章

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Development of Ordered, Porous ...... ng a Block Copolymer Approach.

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Development of Ordered, Porous ...... ng a Block Copolymer Approach.

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Development of Ordered, Porous ...... ng a Block Copolymer Approach.

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Development of Ordered, Porous ...... ng a Block Copolymer Approach.

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Development of Ordered, Porous ...... ng a Block Copolymer Approach.

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Development of Ordered, Porous ...... ng a Block Copolymer Approach.

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P1476

Development of Ordered, Porous ...... ng a Block Copolymer Approach.

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P2093

Michael A Morris

http://www.w3.org/2001/XMLSchema#string

Tandra Ghoshal

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P2860

Size and space controlled hexagonal arrays of superparamagnetic iron oxide nanodots: magnetic studies and application

Numerical Simulations of Directed Self-Assembly in Diblock Copolymer Films using Zone Annealing and Pattern Templating.

Fabrication of solid-state nanopores with single-nanometre precision.

Self-assembled templates for the generation of arrays of 1-dimensional nanostructures: from molecules to devices.

Strategies for Inorganic Incorporation using Neat Block Copolymer Thin Films for Etch Mask Function and Nanotechnological Application.

Aligned silicon nanofins via the directed self-assembly of PS-b-P4VP block copolymer and metal oxide enhanced pattern transfer.

High density and large area arrays of silicon oxide pillars with tunable domain size for mask etch applications.

Fabrication of ordered, large scale, horizontally-aligned si nanowire arrays based on an in situ hard mask block copolymer approach.

Controllable shrinking of inverted-pyramid silicon nanopore arrays by dry-oxygen oxidation.

Patterning and templating for nanoelectronics.

P2888

s41598-018-25446-0

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7252

http://www.w3.org/2001/XMLSchema#string

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scholarly article

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10.1038/S41598-018-25446-0

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English

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http://www.w3.org/2001/XMLSchema#string

P478

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P50

Justin D. Holmes

P577

2018-05-08T00:00:00Z

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P6179

1103771624

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P698

29740003

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P932

5940818

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