Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
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Reversible fluorination of graphene: Evidence of a two-dimensional wide bandgap semiconductorFurther developments in the local-orbital density-functional-theory tight-binding methodHydrogenated monolayer graphene with reversible and tunable wide band gap and its field-effect transistorSingle gallium nitride nanowire lasers.Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and depositionMetal-insulator-semiconductor photodetectors.Photoluminescence and electronic transitions in cubic silicon nitride.Surface-plasmon-enhanced deep-UV light emitting diodes based on AlGaN multi-quantum wellsThe immiscibility of InAlN ternary alloyThermal stability of 2DEG at amorphous LaAlO3/crystalline SrTiO3 heterointerfacesControlled synthesis of semiconductor nanostructures in the liquid phase.A brief overview of some physical studies on the relaxation dynamics and Förster resonance energy transfer of semiconductor quantum dots.Enhanced field emission property of a novel Al2O3 nanoparticle-decorated tubular SiC emitter with low turn-on and threshold field.Electrical Properties of CZO Films Prepared by Ultrasonic Spray Pyrolysis.Nanostructure. Epitaxial diamond polytypes on silicon.A microfabricated sun sensor using GaN-on-sapphire ultraviolet photodetector arrays.Sintering Behavior of Spark Plasma Sintered SiC with Si-SiC Composite Nanoparticles Prepared by Thermal DC Plasma Process.The space charge limited current and huge linear magnetoresistance in silicon.Hybrid Organic-Inorganic Perovskite Photodetectors.Tailoring Semiconductor Lateral Multijunctions for Giant Photoconductivity Enhancement.Ambient temperature deposition of gallium nitride/gallium oxynitride from a deep eutectic electrolyte, under potential control.Nanoparticle shape anisotropy and photoluminescence properties: Europium containing ZnO as a Model Case.Thermal boundary conductance enhancement using experimentally achievable nanostructured interfaces - analytical study combined with molecular dynamics simulation.High-performance photoconductive channels based on (carbon nanotube)-(CdS nanowire) hybrid nanostructures.Fabrication of SiC-C coaxial nanocables: thickness control of C outer layers.Molecular dynamics simulations of beta-SiC using both fixed charge and variable charge models.Effects of Different Defect Types on the Performance of Devices Fabricated on a 4H-SiC Homoepitaxial LayerTheoretical investigation of native defects, impurities, and complexes in aluminum nitrideDensity-functional calculations for III-V nitrides using the local-density approximation and the generalized gradient approximationParamagnetic defects in GaNEnhanced photocatalytic activity and chemical sensor development based on ternary B2O3·Zn6Al2O9·ZnO nanomaterials for environmental safetyValence and conduction band alignment at ScN interfaces with 3C-SiC (111) and 2H-GaN (0001)Progress in Indium Gallium Nitride Materials for Solar Photovoltaic Energy ConversionHeterogeneously Integrated Optoelectronic Devices Enabled by Micro-Transfer PrintingOptical Absorption of SiC, BN, and BeO Nanosheets in Holstein ModelLow Energy Electron Irradiation Induced Deep Level Defects in6H−SiC: The Implication for the Microstructure of the Deep LevelsE1/E2Enhanced ultraviolet emission and optical properties in polyvinyl pyrrolidone surface modified ZnO quantum dotsCharacterisation of borosilicate glass matrix composites reinforced with SiC or ZrO2Influence of mechanical agitation on ZnSe electrodeposition in H2SeO3–ZnSO4 aqueous solutionUltra-rapid, sustainable and selective synthesis of silicon carbide powders and nanomaterials via microwave heating
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Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
description
im August 1994 veröffentlichter wissenschaftlicher Artikel
@de
wetenschappelijk artikel
@nl
наукова стаття, опублікована в серпні 1994
@uk
name
Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
@en
Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
@nl
type
label
Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
@en
Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
@nl
prefLabel
Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
@en
Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
@nl
P2093
P2860
P356
P1476
Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
@en
P2093
P2860
P304
P356
10.1063/1.358463
P577
1994-08-01T00:00:00Z