Study of harsh environment operation of flexible ferroelectric memory integrated with PZT and silicon fabric
about
One-Dimensional Ferroelectric Nanostructures: Synthesis, Properties, and Applications.Flexible ferroelectric element based on van der Waals heteroepitaxyHighly Manufacturable Deep (Sub-Millimeter) Etching Enabled High Aspect Ratio Complex Geometry Lego-Like Silicon Electronics.Functional integrity of flexible n-channel metal–oxide–semiconductor field-effect transistors on a reversibly bistable platformReview on Physically Flexible Nonvolatile Memory for Internet of Everything Electronics
P2860
Study of harsh environment operation of flexible ferroelectric memory integrated with PZT and silicon fabric
description
im August 2015 veröffentlichter wissenschaftlicher Artikel
@de
wetenschappelijk artikel
@nl
наукова стаття, опублікована в серпні 2015
@uk
name
Study of harsh environment ope ...... ed with PZT and silicon fabric
@en
Study of harsh environment ope ...... ed with PZT and silicon fabric
@nl
type
label
Study of harsh environment ope ...... ed with PZT and silicon fabric
@en
Study of harsh environment ope ...... ed with PZT and silicon fabric
@nl
prefLabel
Study of harsh environment ope ...... ed with PZT and silicon fabric
@en
Study of harsh environment ope ...... ed with PZT and silicon fabric
@nl
P2860
P356
P1476
Study of harsh environment ope ...... ed with PZT and silicon fabric
@en
P2093
M. M. Hussain
M. T. Ghoneim
P2860
P304
P356
10.1063/1.4927913
P407
P577
2015-08-03T00:00:00Z