Mechanical anomaly impact on metal-oxide-semiconductor capacitors on flexible silicon fabric
about
Highly Manufacturable Deep (Sub-Millimeter) Etching Enabled High Aspect Ratio Complex Geometry Lego-Like Silicon Electronics.Functional integrity of flexible n-channel metal–oxide–semiconductor field-effect transistors on a reversibly bistable platformReview on Physically Flexible Nonvolatile Memory for Internet of Everything ElectronicsThin PZT-Based Ferroelectric Capacitors on Flexible Silicon for Nonvolatile Memory Applications
P2860
Mechanical anomaly impact on metal-oxide-semiconductor capacitors on flexible silicon fabric
description
im Juni 2014 veröffentlichter wissenschaftlicher Artikel
@de
wetenschappelijk artikel
@nl
наукова стаття, опублікована в червні 2014
@uk
name
Mechanical anomaly impact on m ...... ors on flexible silicon fabric
@en
Mechanical anomaly impact on m ...... ors on flexible silicon fabric
@nl
type
label
Mechanical anomaly impact on m ...... ors on flexible silicon fabric
@en
Mechanical anomaly impact on m ...... ors on flexible silicon fabric
@nl
prefLabel
Mechanical anomaly impact on m ...... ors on flexible silicon fabric
@en
Mechanical anomaly impact on m ...... ors on flexible silicon fabric
@nl
P2093
P2860
P356
P1476
Mechanical anomaly impact on m ...... ors on flexible silicon fabric
@en
P2093
F. Ghodsi Nasseri
G. Bersuker
M. M. Hussain
M. T. Ghoneim
P2860
P304
P356
10.1063/1.4882647
P407
P577
2014-06-09T00:00:00Z