Silicon–Carbon Bond Inversions Driven by 60-keV Electrons in Graphene
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Isotope analysis in the transmission electron microscope.Phase transition and in situ construction of lateral heterostructure of 2D superconducting α/β Mo2C with sharp interface by electron beam irradiation.Computational insights and the observation of SiC nanograin assembly: towards 2D silicon carbide.Structure and electronic states of a graphene double vacancy with an embedded Si dopant.Heteroatom quantum corrals and nanoplasmonics in graphene (HeQuCoG)Direct electric field imaging of graphene defectsFirst-Principle Study on the Interaction between Fe and Trivacancy in Graphene
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Silicon–Carbon Bond Inversions Driven by 60-keV Electrons in Graphene
description
article publié dans la revue scientifique Physical Review Letters
@fr
im September 2014 veröffentlichter wissenschaftlicher Artikel
@de
scientific article published in Physical Review Letters
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wetenschappelijk artikel
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наукова стаття, опублікована у вересні 2014
@uk
name
Silicon–Carbon Bond Inversions Driven by 60-keV Electrons in Graphene
@en
Silicon–Carbon Bond Inversions Driven by 60-keV Electrons in Graphene
@en-gb
Silicon–Carbon Bond Inversions Driven by 60-keV Electrons in Graphene
@nl
type
label
Silicon–Carbon Bond Inversions Driven by 60-keV Electrons in Graphene
@en
Silicon–Carbon Bond Inversions Driven by 60-keV Electrons in Graphene
@en-gb
Silicon–Carbon Bond Inversions Driven by 60-keV Electrons in Graphene
@nl
prefLabel
Silicon–Carbon Bond Inversions Driven by 60-keV Electrons in Graphene
@en
Silicon–Carbon Bond Inversions Driven by 60-keV Electrons in Graphene
@en-gb
Silicon–Carbon Bond Inversions Driven by 60-keV Electrons in Graphene
@nl
P2093
P2860
P50
P1476
Silicon–Carbon Bond Inversions Driven by 60-keV Electrons in Graphene
@en
P2093
Clemens Mangler
Demie Kepaptsoglou
Ondrej L. Krivanek
Tracy C. Lovejoy
Ursel Bangert
P2860
P356
10.1103/PHYSREVLETT.113.115501
P407
P577
2014-09-11T00:00:00Z