about
Hydrogen multicentre bondsHydrogen bonds in Al2O3 as dissipative two-level systems in superconducting qubits.Quantum computing with defects.Tuning bad metal and non-Fermi liquid behavior in a Mott material: Rare-earth nickelate thin filmsObservation of a topologically non-trivial surface state in half-Heusler PtLuSb (001) thin filmsDecomposition mechanism and the effects of metal additives on the kinetics of lithium alanate.Transport properties of KTaO3 from first-principles.Hydrogenated cation vacancies in semiconducting oxides.Acceptor doping in the proton conductor SrZrO3.The particle-size dependence of the activation energy for decomposition of lithium amide.Mechanism of visible-light photocatalysis in nitrogen-doped TiO₂.Phase transformations upon doping in WO3.Interfacial Cation-Defect Charge Dipoles in Stacked TiO2/Al2O3 Gate Dielectrics.Shallow versus deep nature of Mg acceptors in nitride semiconductors.Controlling the Electronic Structures of Perovskite Oxynitrides and their Solid Solutions for Photocatalysis.Hydrogen passivation of impurities in Al(2)O(3).A simple electron counting model for half-Heusler surfaces.Deep donor state of the copper acceptor as a source of green luminescence in ZnOFirst-principles characterization of native-defect-related optical transitions in ZnODonor defects and small polarons on the TiO2(110) surfaceBaSnO3 as a channel material in perovskite oxide heterostructuresErratum: “Oxygen vacancies and donor impurities in β-Ga2O3” [Appl. Phys. Lett. 97, 142106 (2010)]Effects of biaxial stress and layer thickness on octahedral tilts in LaNiO3Absolute surface energies of polar and nonpolar planes of GaNBand alignments and polarization properties of BN polymorphsEffects of carbon on the electrical and optical properties of InN, GaN, and AlNEffects of hole localization on limiting p-type conductivity in oxide and nitride semiconductorsFirst-principles calculations for point defects in solidsHybrid functional calculations ofDXcenters in AlN and GaNHydrogenated vacancies and hidden hydrogen in SrTiO3Oxide interfaces for novel electronic applicationsAmbipolar doping in SnOBand offsets in complex-oxide thin films and heterostructures of SrTiO3/LaNiO3 and SrTiO3/GdTiO3 by soft and hard X-ray photoelectron spectroscopyConductivity and transparency of TiO2from first principlesDangling bonds and vacancies in germaniumDefects at Ge/oxide and III–V/oxide interfacesDual behavior of excess electrons in rutile TiO2Effect of transition-metal additives on hydrogen desorption kinetics of MgH2Effects of strain on the electron effective mass in GaN and AlNImpact of Group-II Acceptors on the Electrical and Optical Properties of GaN
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description
onderzoeker
@nl
researcher
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ricercatore
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հետազոտող
@hy
name
Anderson Janotti
@ast
Anderson Janotti
@en
Anderson Janotti
@es
Anderson Janotti
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type
label
Anderson Janotti
@ast
Anderson Janotti
@en
Anderson Janotti
@es
Anderson Janotti
@nl
prefLabel
Anderson Janotti
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Anderson Janotti
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Anderson Janotti
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Anderson Janotti
@nl
P214
P244
P106
P21
P214
P244
no2015015578
P31
P496
0000-0002-0358-2101
P7859
lccn-no2015015578