Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells
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Strong Geometrical Effects in Submillimeter Selective Area Growth and Light Extraction of GaN Light Emitting Diodes on Sapphire.The microstructure of non-polar a-plane (11 2¯0) InGaN quantum wellsMicrostructural dependency of optical properties of m-plane InGaN multiple quantum wells grown on 2° misoriented bulk GaN substrates
P2860
Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells
description
im Mai 2012 veröffentlichter wissenschaftlicher Artikel
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wetenschappelijk artikel
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наукова стаття, опублікована в травні 2012
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Indium incorporation and emiss ...... semipolar InGaN quantum wells
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Indium incorporation and emiss ...... semipolar InGaN quantum wells
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type
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Indium incorporation and emiss ...... semipolar InGaN quantum wells
@en
Indium incorporation and emiss ...... semipolar InGaN quantum wells
@nl
prefLabel
Indium incorporation and emiss ...... semipolar InGaN quantum wells
@en
Indium incorporation and emiss ...... semipolar InGaN quantum wells
@nl
P2093
P50
P356
P1476
Indium incorporation and emiss ...... semipolar InGaN quantum wells
@en
P2093
Chih-Chien Pan
Daniel Feezell
James S. Speck
Kenji Fujito
Po Shan Hsu
Shih-Chieh Huang
Shinichi Tanaka
Steven P. DenBaars
Yoshinobu Kawaguchi
P2860
P304
P356
10.1063/1.4719100
P407
P577
2012-05-14T00:00:00Z