about
Photoluminescence studies of a perceived white light emission from a monolithic InGaN/GaN quantum well structure.Dynamic defect correlations dominate activated electronic transport in SrTiO3.III-nitride core-shell nanorod array on quartz substrates.Correlated compositions, structures, and photoluminescence properties of gallium nitride nanoparticles.Co-adsorption of water and oxygen on GaN: Effects of charge transfer and formation of electron depletion layer.Surface passivation and self-regulated shell growth in selective area-grown GaN-(Al,Ga)N core-shell nanowires.Correlation of growth temperature with stress, defect states and electronic structure in an epitaxial GaN film grown on c-sapphire via plasma MBE.Defect identification in semiconductors with positron annihilation: Experiment and theoryRole of nitrogen vacancies in the luminescence of Mg-doped GaNFirst-principles studies of beryllium doping of GaNEffect of Si doping on strain, cracking, and microstructure in GaN thin films grown by metalorganic chemical vapor depositionFirst-principles study of native point defects in ZnOEffect of Si doping on the thermal conductivity of bulk GaN at elevated temperatures – theory and experimentStrain in Si doped GaN and the Fermi level effectMolecular-beam epitaxial growth and characterization of quaternary III–nitride compoundsProperties of a hole trap inn-type hexagonal GaNGallium nitride nanowires doped with silicon
P2860
Q35763898-0750A4FA-C3E3-4C12-8238-C9DA28367DE2Q37117502-6A338259-DB75-4D6E-B14D-F18988AA43DEQ41812479-953FF3FD-6F6D-491A-AB71-8224660B55E0Q46219605-2FD545FD-2B6A-4CD7-A717-295268CE441CQ46306352-304D6390-1150-4314-92CC-71C4F76D631BQ50641257-70F384BE-A4C0-4153-ACB3-80A7D5C335A6Q53164164-3210942A-8D0E-418E-A1EB-0EB726A4818AQ56135050-BC42491F-0F82-421E-A423-19E32C0F9E95Q56423372-107C5FE1-00FC-4115-9002-A5266B6D83E7Q56424520-E3890B16-7079-4045-AF89-C29173471E04Q56424558-78DDF080-C787-411F-9860-47A88B8FC9ACQ56424567-D1EDC9C2-070D-4A9E-A426-65CBB71E763FQ57424649-23A97BCC-37DC-4F06-A22D-664FCBC2A51AQ57435986-FC0D73DD-07FC-473A-8289-F2CCE500B336Q58463744-F613A7F7-5539-4DD1-8154-066F21BCA221Q58463775-5746C30A-A326-4533-BFDE-23AE9719B4AFQ58621693-3CC60238-B44B-4688-AC30-640987E7157E
P2860
description
im Juli 1996 veröffentlichter wissenschaftlicher Artikel
@de
wetenschappelijk artikel
@nl
наукова стаття, опублікована в липні 1996
@uk
name
Gallium vacancies and the yellow luminescence in GaN
@en
Gallium vacancies and the yellow luminescence in GaN
@nl
type
label
Gallium vacancies and the yellow luminescence in GaN
@en
Gallium vacancies and the yellow luminescence in GaN
@nl
prefLabel
Gallium vacancies and the yellow luminescence in GaN
@en
Gallium vacancies and the yellow luminescence in GaN
@nl
P356
P1476
Gallium vacancies and the yellow luminescence in GaN
@en
P2093
Jörg Neugebauer
P304
P356
10.1063/1.117767
P407
P577
1996-07-22T00:00:00Z