about
A transparent electrochromic metal-insulator switching device with three-terminal transistor geometryThin-film transistor fabricated in single-crystalline transparent oxide semiconductor.Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors.Topotactic phase transformation of the brownmillerite SrCoO2.5 to the perovskite SrCoO3- δ.Atomic structures and oxygen dynamics of CeO2 grain boundaries.Field-induced water electrolysis switches an oxide semiconductor from an insulator to a metal.Te Monolayer-Driven Spontaneous van der Waals Epitaxy of Two-dimensional Pnictogen Chalcogenide Film on Sapphire.Topotactic Metal-Insulator Transition in Epitaxial SrFeOx Thin Films.High Thermoelectric Power Factor of High-Mobility 2D Electron Gas.Directing Oxygen Vacancy Channels in SrFeO2.5 Epitaxial Thin Films.Graphene Substrate for van der Waals Epitaxy of Layer-Structured Bismuth Antimony Telluride Thermoelectric Film.Epitaxial film growth and superconducting behavior of sodium-cobalt oxyhydrate, NaxCoO2.yH2O (x approximately 0.3, y approximately 1.3).Optoelectronic properties of valence-state-controlled amorphous niobium oxide.Reversible redox reactions in an epitaxially stabilized SrCoO(x) oxygen sponge.Stoichiometric and Oxygen-Deficient VO2 as Versatile Hole Injection Electrode for Organic Semiconductors.Double thermoelectric power factor of a 2D electron system.Thermopower Enhancement by Fractional Layer Control in 2D Oxide SuperlatticesEnhanced thermoelectric power in two-dimensional transition metal dichalcogenide monolayersExcitonic blue luminescence from p-LaCuOSe∕n-InGaZn5O8 light-emitting diode at room temperatureHeteroepitaxial growth of wide gap p-type semiconductors: LnCuOCh (Lr=La, Pr and Nd; Ch=S or Se) by reactive solid-phase epitaxySingle-atomic-layered quantum wells built in wide-gap semiconductorsLnCuOCh(Ln=lanthanide,Ch=chalcogen)The effect of Eu substitution on thermoelectric properties of SrTi0.8Nb0.2O3Oxygen Vacancies Allow Tuning the Work Function of Vanadium DioxideEnhancing the electron mobility via delta-doping in SrTiO3Atomic structure of a Σ3 [110]/(111) grain boundary in CeO2Atomic Structure of a CeO2Grain Boundary: The Role of Oxygen VacanciesCoherent and Incoherent Excitations of Electron-Doped SrTiO3Unusually large enhancement of thermopower in an electric field induced two-dimensional electron gasThermoelectric properties of a semicrystalline polymer doped beyond the insulator-to-metal transition by electrolyte gatingFerroelectric Oxide Thin Film with an Out-of-Plane Electrical ConductivityArbitrary control of the diffusion potential between a plasmonic metal and a semiconductor by an angstrom-thick interface dipole layer
P50
Q27316040-A550F90C-7B4B-45B1-B34F-22A3958CD7D3Q33966212-6A7B54AB-C444-414D-B84E-EE61F14E43ECQ33983345-A34E85E7-3F03-44DC-BE31-8144606F6A62Q34818775-FE7DE414-37DA-4F8E-A092-4C1CEDF17525Q36536333-29E4CBC5-9B60-490B-9167-F743FD3FCCCEQ42700614-B71C0BF6-7333-4FAA-940D-46F855DAAF98Q47680067-CF134DBC-EEBD-46A6-8BE7-729D4BD617F5Q47864508-A510839E-6531-45CE-9B93-86506CFBEC91Q48043520-F8E3488B-EB53-47AA-BC6F-F8B70CED1B25Q48254970-26462EB1-A62B-499F-9310-3C9D110B2643Q51071656-2882798D-96D5-4902-8995-AC31DED6D6FAQ51261966-3F623A4F-9F27-468F-BA2A-FFA701326043Q51336012-F46EEEF6-3659-4660-955F-6543B48E512CQ51788982-6ED929C3-354D-47F5-92D8-AF67B20FCE32Q52649169-AA5D8BAB-9719-4432-9597-2DDB94BA7183Q55240563-370C961C-887A-4FDD-B387-E8EE5F036E5EQ57696454-5962A15B-36D7-4B9F-8B6E-28639AB0875EQ57759619-F436F948-F39F-4A40-82CC-8009FDF9F17BQ57837608-FFFE26D7-4234-4379-8DAF-B93CBB4DEA97Q57837624-7F2867B1-5A6F-4D6F-9702-353F1AA04761Q57837640-224FC9D2-43D7-4892-9965-119213285794Q59856130-E0A431C9-64E0-4BF1-9AA2-24B11594FDA0Q60149252-52EC5A54-A141-43FF-9703-FEE0D4626C7EQ62037505-D8354C01-84FB-439D-A392-17BA3D8AF090Q62617264-04C88D29-D954-46F2-84E2-2B6209165C26Q62617300-8F40491C-09A4-4F63-B49B-220B5AD59E8AQ80907396-5274C3DF-C351-490E-A976-6064E0E49351Q83364635-A59FEE8E-C362-4532-B005-F922905BEE04Q89943155-C4696F09-8AF0-4A67-A733-3C276A7B5429Q92251379-32627BBB-7A03-400B-AAE9-AEEFFF714CF5Q92856010-A19C91B7-61ED-4D47-A644-E30E4BB2DAF4
P50
description
researcher
@en
wetenschapper
@nl
հետազոտող
@hy
name
Hiromichi Ohta
@ast
Hiromichi Ohta
@en
Hiromichi Ohta
@es
Hiromichi Ohta
@nl
type
label
Hiromichi Ohta
@ast
Hiromichi Ohta
@en
Hiromichi Ohta
@es
Hiromichi Ohta
@nl
prefLabel
Hiromichi Ohta
@ast
Hiromichi Ohta
@en
Hiromichi Ohta
@es
Hiromichi Ohta
@nl
P106
P31
P496
0000-0001-7013-0343