(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs
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Theory of ferromagnetic (III,Mn)V semiconductorsInfluence of defects on the lattice constant of GaMnAsRoom-Temperature Ferromagnetism in a II-VI Diluted Magnetic Semiconductor Z n 1 − x C r x T eObservation of Giant Magnetic Linear Dichroism in(Ga,Mn)AsDemonstration of the spin solar cell and spin photodiode effect.Atom-by-atom substitution of Mn in GaAs and visualization of their hole-mediated interactions.Electronic and magnetic properties of manganese and iron-doped Ga(n)As(n) nanocages (n=7-12).Spin-wave resonance model of surface pinning in ferromagnetic semiconductor (Ga,Mn)As thin filmsBa(Zn(1-2x)MnxCux)2As2: A Bulk Form Diluted Ferromagnetic Semiconductor with Mn and Cu Codoping at Zn SitesFermi level position, Coulomb gap, and Dresselhaus splitting in (Ga,Mn)As.Sudden restoration of the band ordering associated with the ferromagnetic phase transition in a semiconductor.Assembling non-ferromagnetic materials to ferromagnetic architectures using metal-semiconductor interfaces.Itinerant magnetism in doped semiconducting β-FeSi₂ and CrSi₂New Fluoride-arsenide Diluted Magnetic Semiconductor (Ba,K)F(Zn,Mn)As with Independent Spin and Charge Doping.A ten-year perspective on dilute magnetic semiconductors and oxides.Transport properties of hybrids with ferromagnetic MnAs nanoclusters and their potential for new magnetoelectronic devices.Pharmaceutical and biomedical applications of quantum dots.Enhanced magneto-optical properties of semiconductor EuS nanocrystals assisted by surface plasmon resonance of gold nanoparticles.Bipolar magnetic materials for electrical manipulation of spin-polarization orientation.Field-free manipulation of magnetization alignments in a Fe/GaAs/GaMnAs multilayer by spin-orbit-induced magnetic fieldsCrafting ferromagnetism in Mn-doped MgO surfaces with p-type defectsMn-doped Ge and Si: A Review of the Experimental StatusNature of charge transport and p-electron ferromagnetism in nitrogen-doped ZrO2: an ab initio perspective.Contributions of magnetic properties in epitaxial copper-doped ZnO.New diluted ferromagnetic semiconductor with Curie temperature up to 180 K and isostructural to the '122' iron-based superconductors.Bulk electronic structure of the dilute magnetic semiconductor Ga(1-x)Mn(x)As through hard X-ray angle-resolved photoemission.Direct-current voltages in (Ga,Mn)As structures induced by ferromagnetic resonance.A two-dimensional Fe-doped SnS2 magnetic semiconductor.A model ferromagnetic semiconductor. Interview by Fabio Pulizzi.Co-occurrence of superparamagnetism and anomalous hall effect in highly reduced cobalt-doped rutile TiO2-delta films.Adjacent Fe-Vacancy Interactions as the Origin of Room Temperature Ferromagnetism in (In(1-x)Fe(x))2O3.Transition temperature of a magnetic semiconductor with angular momentum j.The essential role of carefully optimized synthesis for elucidating intrinsic material properties of (Ga,Mn)As.Ferromagnetism in Ga(1-x)Mn(x)P: evidence for inter-Mn exchange mediated by localized holes within a detached impurity band.Electric field effect in diluted magnetic insulator anatase Co: TiO2.Role of disorder in Mn:GaAs, Cr:GaAs, and Cr:GaN.Polarization of valence band holes in the (Ga,Mn)as diluted magnetic semiconductor.Correlated defects, metal-insulator transition, and magnetic order in ferromagnetic semiconductors.Onset of Ferromagnetism in Low-Doped Ga1-xMnxAs.On the origin of high-temperature ferromagnetism in the low-temperature-processed Mn-Zn-O system.
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Q21563856-5E2E8B76-01A3-4B4C-8BB6-271DA13C0909Q27440564-FFB8D1BA-2A48-4065-BDE4-DF7DE7109FF3Q27450925-DA3408DD-53E0-44F5-89D4-812684F3461DQ29544177-21902D24-A010-4290-93C1-1A347F1C53E5Q30452064-72F056E1-011C-4E78-BB1A-B12D5DC44599Q33251906-A2CCC7CB-C310-45C9-8250-7D34C63A1A9EQ33357816-9812BFD9-4B64-4DA6-B895-2BD2EC5D2E79Q34101196-0951A4DC-A13F-42A2-9B78-19A6C0BD4928Q36192461-4FEF75C0-9DFC-4663-96D0-78EDB1A587CBQ36970570-2227D469-0E79-4A71-9AC4-6CDE265A8C68Q37060928-D93F91B2-FCDF-42EF-9AC9-5F0AD2D82FBEQ37294216-DCFFB794-F2F5-4EB2-B3FC-A0634543B6E9Q37397778-201E9856-52C5-4981-90B1-7ED5E3F088E4Q37428228-DDFA4B58-A788-49FF-99D5-8438E575FB18Q37811880-6E5E48D7-A387-43EC-A022-7A999DFB8FC4Q38264035-72B76F19-A72B-4201-8ADF-3F3F642B1C0AQ38522304-65E02F78-9E4E-4CEE-9F36-F66B95E71ABAQ39337087-B7AFD08D-B16C-42C5-9E65-A0D29B2A2D92Q39357488-9BE377DB-80EB-492D-B499-4618D6DED91BQ41579705-CAACE80F-E86A-40EC-A39B-ED7E399B44FCQ41646033-54760D44-821A-4548-A9B1-84FCC0C3FE78Q42243125-9BE3B71A-AAB3-47EC-BD9D-BA2174608D8CQ43163525-3AC70579-B3D3-4D60-A638-0F7CA54D2596Q44000643-F86B40D1-E6F8-4D83-807B-1CC5DA174645Q44451497-7E9D975F-EFAB-4193-938A-E062880A455AQ44634328-A57D947B-4230-4CAE-B945-79B62752BE10Q46766530-771EF4E6-284C-4DA6-AB66-EFC7E73A87B6Q47110828-D2AE4930-EA7D-4473-A62D-607A05498CAEQ48452535-507897ED-FF94-4B9C-B4BE-D0159A291B9CQ49250747-3EB660D9-01BB-4611-A6B9-602AFB935474Q50239561-F7114E02-7D3A-4489-908F-8437FCA8B1B0Q51172327-3E1CC9B0-BF2C-467A-BCE9-75DD2C5C5377Q51272828-6BC4D906-333F-4B4F-9573-3401D2F77919Q51296916-8F0CC465-B2AF-45E9-9BAF-ACCE93A85535Q51460650-92E25FA1-EA3F-4A9A-B695-5ACDC3AFD1F5Q51524872-84A06D22-B9FE-404A-A37E-C1F168FB05AEQ52938476-28F379DD-6060-4643-931C-148A450169AAQ52955596-E7C416DA-76BB-4650-9090-EEDEA2717742Q53550954-809E4B03-D805-467D-A404-9730AA6F9462Q53633876-89BF2A4B-D0C5-4B34-812B-D6BD7E70CE0D
P2860
(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs
description
im Juli 1996 veröffentlichter wissenschaftlicher Artikel
@de
wetenschappelijk artikel
@nl
наукова стаття, опублікована в липні 1996
@uk
name
(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs
@en
(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs
@nl
type
label
(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs
@en
(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs
@nl
prefLabel
(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs
@en
(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs
@nl
P2093
P356
P1476
(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs
@en
P2093
P304
P356
10.1063/1.118061
P407
P577
1996-07-15T00:00:00Z