Ferromagnetism in Dilute Magnetic Semiconductors through Defect Engineering: Li-Doped ZnO
about
A flux-coupled ac/dc magnetizing device.Carbon p electron ferromagnetism in silicon carbide.Giant negative magnetoresistance in Manganese-substituted Zinc Oxide.Influence of Y-doped induced defects on the optical and magnetic properties of ZnO nanorod arrays prepared by low-temperature hydrothermal processAssembling non-ferromagnetic materials to ferromagnetic architectures using metal-semiconductor interfaces.Realizing half-metallicity in K2CoF4 exfoliated nanosheets via defect engineering.Codoping and Interstitial Deactivation in the Control of Amphoteric Li Dopant in ZnO for the Realization of p-Type TCOs.Crafting ferromagnetism in Mn-doped MgO surfaces with p-type defectsUV-visible spectroscopic analysis of electrical properties in alkali metal-doped amorphous zinc tin oxide thin-film transistors.Ti-doped ZnO Thin Films Prepared at Different Ambient Conditions: Electronic Structures and Magnetic Properties.Spectroscopic evidence that Li doping creates shallow VZn in ZnO.The magnetic and adsorption properties of ZnO1-xSx nanoparticles.Intrinsic Ferromagnetism in the Diluted Magnetic Semiconductor Co:TiO_{2}.Synthesis of Ferromagnetic Fe0.6 Mn0.4 O Nanoflowers as a New Class of Magnetic Theranostic Platform for In Vivo T1 -T2 Dual-Mode Magnetic Resonance Imaging and Magnetic Hyperthermia Therapy.Black phosphorene/monolayer transition-metal dichalcogenides as two dimensional van der Waals heterostructures: a first-principles study.The influence of carbon concentration on the electronic structure and magnetic properties of carbon implanted ZnO thin films.Half-metallicity in single-layered manganese dioxide nanosheets by defect engineering.High-Curie-Temperature Ferromagnetism in (Sc,Fe)F3 Fluorides and its Dependence on Chemical Valence.Origin of magnetic properties in carbon implanted ZnO nanowires.Characterization of tin(II) sulfide defects/vacancies and correlation with their photocurrentInteraction between magnetic moments and itinerant carriers in d0 ferromagnetic SiCZinc Vacancy-Induced Room-Temperature Ferromagnetism in Undoped ZnO Thin Films
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Q34791677-266FFB5D-7682-4407-AC04-0360BEBC5396Q35165786-06E9AD96-3A9D-4BAE-B7B3-4BD329C80DEAQ35188805-7F274752-2B31-44C8-BC5C-C8685B3DADB3Q36204741-925C4A9D-F6A2-43B1-AFCE-1DC1B59FC829Q37294216-CE6E03D9-E4F4-41C7-9FA9-EC5E5110534FQ38861742-EE25C2D1-03B4-44D4-9220-2BBCC60542ECQ40991659-65422CA5-2634-4DDF-9BD2-8598952C0C1CQ41646033-8D461D56-110C-473A-9E57-AF5D2637FB5BQ46092422-1EF968CF-1732-45DF-9927-B07907E5F2A9Q47113777-9A9C858E-6F27-40C0-B6EC-24736B577E90Q48263523-61EAB2D9-E143-4EC2-8CD6-E9FEA939E0A1Q49692277-4AE5425B-E52A-4A3D-87B5-D1AD6A786F60Q51084592-02BC5BE3-3612-423F-9AB7-0276A73F235EQ51293248-0972CDC5-D957-4D52-8EB6-21D6BC39BB0CQ51506026-56141E5E-9CB1-431C-B403-FB4F39244DFBQ53300572-69D6A28F-A84D-40A6-A8F8-D583535F1E7EQ53385582-B6333F2E-03E0-453A-9F64-F1C8567EDBE9Q53438354-D83F9134-A144-49A4-AFE0-6E1596241DB1Q55374187-14902B06-729D-4C82-9EE9-1E820293AF61Q57345244-41C2268E-E636-4556-95FB-FA2AE7A7C636Q57968985-59D36BC8-8E43-4668-85CA-CD623C3C457AQ58909520-82727BFA-8E7D-4CEF-B58B-D1D18BC59F13
P2860
Ferromagnetism in Dilute Magnetic Semiconductors through Defect Engineering: Li-Doped ZnO
description
article publié dans la revue scientifique Physical Review Letters
@fr
im März 2010 veröffentlichter wissenschaftlicher Artikel
@de
scientific article published in Physical Review Letters
@en
wetenschappelijk artikel
@nl
наукова стаття, опублікована в березні 2010
@uk
name
Ferromagnetism in Dilute Magnetic Semiconductors through Defect Engineering: Li-Doped ZnO
@en
Ferromagnetism in Dilute Magnetic Semiconductors through Defect Engineering: Li-Doped ZnO
@nl
type
label
Ferromagnetism in Dilute Magnetic Semiconductors through Defect Engineering: Li-Doped ZnO
@en
Ferromagnetism in Dilute Magnetic Semiconductors through Defect Engineering: Li-Doped ZnO
@nl
prefLabel
Ferromagnetism in Dilute Magnetic Semiconductors through Defect Engineering: Li-Doped ZnO
@en
Ferromagnetism in Dilute Magnetic Semiconductors through Defect Engineering: Li-Doped ZnO
@nl
P2093
P2860
P50
P1476
Ferromagnetism in dilute magnetic semiconductors through defect engineering: Li-doped ZnO
@en
P2093
P2860
P304
P356
10.1103/PHYSREVLETT.104.137201
P407
P577
2010-03-29T00:00:00Z