Highly Anisotropic GeSe Nanosheets for Phototransistors with Ultrahigh Photoresponsivity

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Highly Anisotropic GeSe Nanosheets for Phototransistors with Ultrahigh Photoresponsivity

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scientific article published on 21 June 2018

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wetenschappelijk artikel

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наукова стаття, опублікована в серпні 2018

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Highly Anisotropic GeSe Nanosheets for Phototransistors with Ultrahigh Photoresponsivity

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Highly Anisotropic GeSe Nanosheets for Phototransistors with Ultrahigh Photoresponsivity

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Highly Anisotropic GeSe Nanosheets for Phototransistors with Ultrahigh Photoresponsivity

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Highly Anisotropic GeSe Nanosheets for Phototransistors with Ultrahigh Photoresponsivity

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Highly Anisotropic GeSe Nanosheets for Phototransistors with Ultrahigh Photoresponsivity

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Highly Anisotropic GeSe Nanosheets for Phototransistors with Ultrahigh Photoresponsivity

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P1476

Highly Anisotropic GeSe Nanosheets for Phototransistors with Ultrahigh Photoresponsivity

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P2093

Bao Jin

http://www.w3.org/2001/XMLSchema#string

Huiqiao Li

http://www.w3.org/2001/XMLSchema#string

Jing Yu

http://www.w3.org/2001/XMLSchema#string

Kailang Liu

http://www.w3.org/2001/XMLSchema#string

Xiaozong Hu

http://www.w3.org/2001/XMLSchema#string

Xing Zhou

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P2860

Effective passivation of exfoliated black phosphorus transistors against ambient degradation

Black phosphorus field-effect transistors

Ultrathin SnSe2 Flakes Grown by Chemical Vapor Deposition for High-Performance Photodetectors.

Ultrasensitive photodetectors based on monolayer MoS2.

Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics.

NIR Schottky photodetectors based on individual single-crystalline GeSe nanosheet.

High-performance n-type black phosphorus transistors with type control via thickness and contact-metal engineering.

Investigation and Manipulation of Different Analog Behaviors of Memristor as Electronic Synapse for Neuromorphic Applications

Flexible Photodetectors Based on 1D Inorganic Nanostructures.

P-Type Polar Transition of Chemically Doped Multilayer MoS2 Transistor.

P304

1800478

http://www.w3.org/2001/XMLSchema#string

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scholarly article

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10.1002/ADVS.201800478

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P407

English

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http://www.w3.org/2001/XMLSchema#string

P478

http://www.w3.org/2001/XMLSchema#string

P50

Tianyou Zhai

P577

2018-06-21T00:00:00Z

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P698

30128256

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P932

6096999

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