Quantitative description of photoexcited scanning tunneling spectroscopy and its application to the GaAs(110) surface
about
From time-resolved atomic-scale imaging of individual donors to their cooperative dynamicsA versatile implementation of pulsed optical excitation in scanning tunneling microscopy.Fermi-level pinning and intrinsic surface states of Al1−xInxN(101¯0) surfacesProbing defect states in polycrystalline GaN grown on Si(111) by sub-bandgap laser-excited scanning tunneling spectroscopyImportance of quantum correction for the quantitative simulation of photoexcited scanning tunneling spectra of semiconductor surfacesIntrinsic electronic properties of high-quality wurtzite InN
P2860
Quantitative description of photoexcited scanning tunneling spectroscopy and its application to the GaAs(110) surface
description
im Juni 2015 veröffentlichter wissenschaftlicher Artikel
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wetenschappelijk artikel
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наукова стаття, опублікована в червні 2015
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name
Quantitative description of ph ...... nd its application to the GaAs
@nl
Quantitative description of ph ...... ation to the GaAs(110) surface
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type
label
Quantitative description of ph ...... nd its application to the GaAs
@nl
Quantitative description of ph ...... ation to the GaAs(110) surface
@en
prefLabel
Quantitative description of ph ...... nd its application to the GaAs
@nl
Quantitative description of ph ...... ation to the GaAs(110) surface
@en
P2860
P50
P1433
P1476
Quantitative description of ph ...... ation to the GaAs(110) surface
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P2093
P. H. Weidlich
P2860
P356
10.1103/PHYSREVB.91.235305
P407
P577
2015-06-04T00:00:00Z