about
Time-resolved photoluminescence characterization of GaAs nanowire arrays on native substrate.GaAs Nanowire pn-Junctions Produced by Low-Cost and High-Throughput Aerotaxy.The effect of Sb-surfactant on GaInP CuPtB type ordering: assessment through dark field TEM and aberration corrected HAADF imaging.In situ study of Ge(100) surfaces with tertiarybutylphosphine supply in vapor phase epitaxy ambientOptical in situ monitoring of hydrogen desorption from Ge(100) surfacesGe(100) surfaces prepared in vapor phase epitaxy process ambientIn situ control of As dimer orientation on Ge(100) surfacesIn situ control of Si(100) and Ge(100) surface preparation for the heteroepitaxy of III-V solar cell architecturesUnderstanding InP Nanowire Array Solar Cell Performance by Nanoprobe-Enabled Single Nanowire MeasurementsDegradation of Ge subcells by thermal load during the growth of multijunction solar cellsRefractive indexes and extinction coefficients of n- and p-type doped GaInP, AlInP and AlGaInP for multijunction solar cells10 MeV proton irradiation effects on GaInP/GaAs/Ge concentrator solar cells and their component subcellsEffect of Ge autodoping during III-V MOVPE growth on Ge substratesInP/InAsP Nanowire-Based Spatially Separate Absorption and Multiplication Avalanche PhotodetectorsOn the thermal degradation of tunnel diodes in multijunction solar cellsQuantitative Determination of Luminescent Coupling in Multijunction Solar Cells from Spectral Photovoltage MeasurementsEffect of Sb on the quantum efficiency of GaInP solar cellsDifferences between GaAs/GaInP and GaAs/AlInP interfaces grown by movpe revealed by depth profiling and angle-resolved X-ray photoelectron spectroscopiesLimiting factors on the semiconductor structure of III-V multijunction solar cells for ultra-high concentration (1000-5000 suns)Analysis of perimeter recombination in the subcells of GaInP/GaAs/Ge triple-junction solar cellsImplications of low breakdown voltage of component subcells on external quantum efficiency measurements of multijunction solar cellsOn the use of Sb to improve the performance of GaInP subcells of multijunction solar cellsOptical in situ calibration of Sb for growing disordered GaInP by MOVPEWhy can’t I measure the external quantum efficiency of the Ge subcell of my multijunction solar cell?On the use of I–V curves as a diagnosis tool for proper external quantum efficiency measurements of multijunction solar cellsHighly conductive p + + -AlGaAs/n + + -GaInP tunnel junctions for ultra-high concentrator solar cellsApplication of photoreflectance to advanced multilayer structures for photovoltaicsAnalysis of the surface state of epi-ready Ge wafersOpen-atmosphere structural depth profiling of multilayer samples of photovoltaic interest using laser-induced plasma spectrometryRoadmap towards efficiencies over 40% at ultra-high concentrations (> 1000 suns)Triple-junction solar cells for ultra-high concentrator applicationsExtended Triple-Junction Solar Cell 3D Distributed Model: Application to Chromatic Aberration-Related LossesReflectance anisotropy spectroscopy assessment of the MOVPE nucleation of GaInP on germanium (100)Si(100) versus Ge(100): Watching the interface formation for the growth of III-V-based solar cells on abundant substratesXPS as characterization tool for PV: From the substrate to complete III-V multijunction solar cellsXPS as characterization tool for PV: From the substrate to complete III-V multijunction solar cellsCapacitance measurements for subcell characterization in multijunction solar cellsApplication of capacitance-based techniques to the characterization of multijunction solar cellsIII–V multijunction solar cells for ultra-high concentration photovoltaicsSimulating III–V concentrator solar cells: A comparison of advantages and limitations of lumped analytical models; distributed analytical models and numerical simulation
P50
Q47395434-D3FD8D52-9393-4A15-B138-C7213D68E25FQ47757948-4198BBBB-9236-4A2B-989A-8CE18985D8E9Q53840912-17739FE9-57D7-41F0-B2F6-70623580613FQ56917028-1B1D4F74-BBE6-4427-827C-41DDC812D3F7Q56917033-44C6F19E-B187-4317-9B6B-763C11A44888Q56917055-1AFC6AFB-1E48-4E70-9A6D-D8667F6C3C61Q56917068-0B588A76-6571-4B21-8899-6B67332657DAQ56917075-D466EBA8-0FE6-417E-A02C-9A225C0CBB0FQ57592569-F2DE39B4-D6DB-4A56-8782-D7F881A49A47Q57592570-2EDBD7BE-8A74-41F3-829A-75C2282F4CADQ57592573-59728388-0814-4F05-B09D-D132C4AB4C0BQ57592577-1314A6A3-FA67-4250-8744-C4332F8E22E3Q57592579-7503B405-21DF-45E3-8115-592E80E6AD65Q57592583-B57F0C16-EB8D-4D79-B4EC-4C97F552DFFCQ57592588-8E235F78-D2E3-4EE2-A42C-C05535424104Q57592592-8E1F2581-1D42-4831-B641-8404AADC78E2Q57592594-8736E4FE-43A6-4702-A307-4D6B16213D6AQ57592598-2AF5690E-68B4-4A83-8540-3D891E5BA731Q57592604-2F8BA2B2-CF04-41B6-918C-2AFA722C0BBEQ57592613-2B97EDDB-4E6B-48EB-A34B-5BB64BA2B1CCQ57592619-BE14488F-A624-4CCC-B792-77BB22D988DAQ57592625-F3198006-7465-43AB-ABFF-942D43EE1420Q57592629-3BEA2D3C-C053-479A-BC6E-6B60D53A8268Q57592632-041257FF-9D46-44CC-99B2-D20CB60A493CQ57592637-083D8157-9C23-4056-BCF9-4D591B1FA53AQ57592647-9A7BF15C-6DD6-46A3-A8DC-E987046E1E38Q57592656-DAA1CCAD-398A-49BB-AB28-B41CC44C875BQ57592664-C519D4FD-32F3-4454-8F33-105EE6715F07Q57592674-C8C6AB64-95E9-4E0A-931C-C28EF1AB580BQ57592680-1FF11CF8-DA20-4EBB-B80F-6997489B391FQ57592686-6206F918-C6AA-46C6-891C-91152B344034Q57592694-A66F8747-3F7A-4719-B881-109380204C01Q57592699-BAA624C4-B4AE-4A19-89A2-B5A5AE277DBBQ57592703-46BA0FE3-7B45-4192-BCA9-B1DF79D8CF3BQ57592718-65CAD444-F408-42BA-A587-CDDD3431A646Q57592723-120A65FB-83B0-4109-8AE2-923BCCE2D0A5Q57592730-D0A3816A-3C9E-445B-9B7D-E460DB208EDDQ57592739-F2956239-B8A7-4E70-9B2E-B5DC2B665F0CQ57592741-5C9D2E58-7A15-4686-8E48-0DA110CB1AC6Q57592746-4241D005-8707-4F65-BDC3-8E9664EAE72A
P50
description
researcher ORCID id 0000-0001-6755-1841
@en
wetenschapper
@nl
name
Enrique Barrigon
@ast
Enrique Barrigon
@en
Enrique Barrigon
@es
Enrique Barrigon
@nl
type
label
Enrique Barrigon
@ast
Enrique Barrigon
@en
Enrique Barrigon
@es
Enrique Barrigon
@nl
altLabel
Enrique Barrigón
@en
prefLabel
Enrique Barrigon
@ast
Enrique Barrigon
@en
Enrique Barrigon
@es
Enrique Barrigon
@nl
P106
P1153
24766188900
P21
P31
P496
0000-0001-6755-1841