Metal–insulator–semiconductor field-effect transistors (MISFETs) using p-type SnS and nanometer-thick Al2S3 layers
Metal–insulator–semiconductor field-effect transistors (MISFETs) using p-type SnS and nanometer-thick Al2S3 layers
description
article
@en
im Jahr 2017 veröffentlichter wissenschaftlicher Artikel
@de
wetenschappelijk artikel
@nl
наукова стаття, опублікована у 2017
@uk
name
Metal–insulator–semiconductor ...... d nanometer-thick Al2S3 layers
@en
Metal–insulator–semiconductor field-effect transistors
@nl
type
label
Metal–insulator–semiconductor ...... d nanometer-thick Al2S3 layers
@en
Metal–insulator–semiconductor field-effect transistors
@nl
prefLabel
Metal–insulator–semiconductor ...... d nanometer-thick Al2S3 layers
@en
Metal–insulator–semiconductor field-effect transistors
@nl
P2093
P2860
P356
P1433
P1476
Metal–insulator–semiconductor ...... d nanometer-thick Al2S3 layers
@en
P2093
Devika Mudusu
Gunasekhar Kothakota Ramakrishna Reddy
Koteeswara Reddy Nandanapalli
Raja Gopal Erode Subramanian
Ramesh Karuppannan
Sreekantha Reddy Dugasani
Sung Ha Park
P2860
P304
11111-11117
P356
10.1039/C7RA00041C
P577
2017-01-01T00:00:00Z