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Ab initio theory of the Si(111)-(7 x 7) surface reconstruction: A challenge for massively parallel computationPulay-type formula for surface stress in a local-density-functional, linear combination of atomic orbitals, electronic-structure calculation.beta -phase of Pb on Ge(111): The competing roles of electronic bonding and thermal fluctuations.Mechanisms of molecular manipulation with the scanning tunneling microscope at room temperature: chlorobenzene/si(111)-(7 x 7).Theory of vacancy-stabilized ( sqrt 3 x sqrt 3 ) displacive reconstruction of the clean Si(111) surface.Surface doping and stabilization of Si(111) with boron.Low-temperature atomic dynamics of the Si(111)-7×7Surface energy and stability of stress-driven discommensurate surface structures
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P2860
description
article
@en
im August 1989 veröffentlichter wissenschaftlicher Artikel
@de
wetenschappelijk artikel
@nl
наукова стаття, опублікована в серпні 1989
@uk
name
Adatoms on Si
@nl
Adatoms on Si(111) and Ge(111) surfaces
@en
type
label
Adatoms on Si
@nl
Adatoms on Si(111) and Ge(111) surfaces
@en
prefLabel
Adatoms on Si
@nl
Adatoms on Si(111) and Ge(111) surfaces
@en
P2860
P356
P1433
P1476
Adatoms on Si(111) and Ge(111) surfaces
@en
P2093
P2860
P304
P356
10.1103/PHYSREVB.40.3905
P407
P577
1989-08-01T00:00:00Z