Carbon Nanotube Network Ambipolar Field-Effect Transistors with 108On/Off Ratio
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Understanding Charge Transport in Mixed Networks of Semiconducting Carbon Nanotubes.Highly Efficient and Scalable Separation of Semiconducting Carbon Nanotubes via Weak Field CentrifugationCoPt/CeO2 catalysts for the growth of narrow diameter semiconducting single-walled carbon nanotubes.Simultaneous Improvement of Hole and Electron Injection in Organic Field-effect Transistors by Conjugated Polymer-wrapped Carbon Nanotube Interlayers.Double-walled carbon nanotube processing.Endeavor of Iontronics: From Fundamentals to Applications of Ion-Controlled Electronics.Polymer-sorted semiconducting carbon nanotube networks for high-performance ambipolar field-effect transistors.A Cu-atom-chain current channel with a width of approximately 0.246 nm on (5, 0) single-wall carbon nanotube.Excited-State Interaction of Semiconducting Single-Walled Carbon Nanotubes with Their Wrapping Polymers.On-Chip Chemical Self-Assembly of Semiconducting Single-Walled Carbon Nanotubes (SWNTs): Toward Robust and Scale Invariant SWNTs Transistors.Large-area assembly of densely aligned single-walled carbon nanotubes using solution shearing and their application to field-effect transistors.Data on liquid gated CNT network FETs on flexible substratesAnomalous Carrier Transport in Ambipolar Field-Effect Transistor of Large Diameter Single-Walled Carbon Nanotube NetworkSelecting Semiconducting Single-Walled Carbon Nanotubes with Narrow Bandgap Naphthalene Diimide-Based PolymersAerosol-Jet Printing of Polymer-Sorted (6,5) Carbon Nanotubes for Field-Effect Transistors with High ReproducibilityExtracting the field-effect mobilities of random semiconducting single-walled carbon nanotube networks: A critical comparison of methodsModeling carrier density dependent charge transport in semiconducting carbon nanotube networks
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Q27300802-3F6E7EA4-2606-436E-ADB7-A277E1EA93F6Q27313898-1C04D435-AF67-41D3-854B-AEAC03A3AB32Q35836805-414C5DD1-1666-44C3-9B41-E8BA43013F69Q37734468-D6228304-915C-4248-9DB5-D6A26159E1EEQ38433433-E22B1C3D-BFB5-456C-8288-B008D2A9D9B1Q38674657-2119D0C7-5B3B-4C34-8FE5-A0F811399D69Q41885797-EE4B930A-83BD-4848-906E-70A568DE0EDEQ42374190-18E5FFEE-DA4D-45CD-B3E8-3958E8DFD7F9Q45783410-DBB9FECD-88CB-455D-94D1-7CEC5A71BA92Q51441339-040ACFBA-925F-468D-9292-07263E5D659EQ53228945-3970C1A0-FEA4-4B47-B851-38DF3995E725Q57729128-757AA3A6-1B3F-4814-9CE6-28F9695D05CDQ57730171-31FBAD8F-97E4-468A-BD05-185FBF5FAB88Q57730180-6BF46DFB-CF46-4048-BF69-50485AC71205Q58558192-CC0CC7D6-C390-46E9-A18B-D0B84BC31661Q58558240-D3897D57-29BE-4D69-9B60-8D5378BFC147Q58558249-3199A44A-D6CF-4F0A-B54B-DF5ADAC7A2D8
P2860
Carbon Nanotube Network Ambipolar Field-Effect Transistors with 108On/Off Ratio
description
article
@en
im Juli 2014 veröffentlichter wissenschaftlicher Artikel
@de
wetenschappelijk artikel
@nl
наукова стаття, опублікована в липні 2014
@uk
name
Carbon Nanotube Network Ambipolar Field-Effect Transistors with 108On/Off Ratio
@en
Carbon Nanotube Network Ambipolar Field-Effect Transistors with 108On/Off Ratio
@nl
type
label
Carbon Nanotube Network Ambipolar Field-Effect Transistors with 108On/Off Ratio
@en
Carbon Nanotube Network Ambipolar Field-Effect Transistors with 108On/Off Ratio
@nl
prefLabel
Carbon Nanotube Network Ambipolar Field-Effect Transistors with 108On/Off Ratio
@en
Carbon Nanotube Network Ambipolar Field-Effect Transistors with 108On/Off Ratio
@nl
P2093
P2860
P50
P356
P1433
P1476
Carbon nanotube network ambipolar field-effect transistors with 10(8) on/off ratio
@en
P2093
Jorge Mario Salazar Rios
Martin Fritsch
Nils Fröhlich
Stefan Jung
Sybille Allard
Vladimir Derenskyi
Widianta Gomulya
P2860
P304
P356
10.1002/ADMA.201401395
P407
P577
2014-07-19T00:00:00Z