Reducing charge trapping in PbS colloidal quantum dot solids
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High mobility and low density of trap states in dual-solid-gated PbS nanocrystal field-effect transistors.Stoichiometric control of the density of states in PbS colloidal quantum dot solids.Strain-Modulated Charge Transport in Flexible PbS Nanocrystal Field-Effect TransistorsTunable doping in PbS nanocrystal field-effect transistors using surface molecular dipolesDouble Gate PbS Quantum Dot Field-Effect Transistors for Tuneable Electrical CharacteristicsDetermination of the Electronic Energy Levels of Colloidal Nanocrystals using Field-Effect Transistors and Ab-Initio Calculations
P2860
Reducing charge trapping in PbS colloidal quantum dot solids
description
im März 2014 veröffentlichter wissenschaftlicher Artikel
@de
wetenschappelijk artikel
@nl
наукова стаття, опублікована в березні 2014
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name
Reducing charge trapping in PbS colloidal quantum dot solids
@en
Reducing charge trapping in PbS colloidal quantum dot solids
@nl
type
label
Reducing charge trapping in PbS colloidal quantum dot solids
@en
Reducing charge trapping in PbS colloidal quantum dot solids
@nl
prefLabel
Reducing charge trapping in PbS colloidal quantum dot solids
@en
Reducing charge trapping in PbS colloidal quantum dot solids
@nl
P2093
P2860
P356
P1476
Reducing charge trapping in PbS colloidal quantum dot solids
@en
P2093
M. I. Nugraha
S. Z. Bisri
P2860
P304
P356
10.1063/1.4869216
P407
P577
2014-03-17T00:00:00Z