Nonuniversality due to inhomogeneous stress in semiconductor surface nanopatterning by low-energy ion-beam irradiation
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Ion Beam Nanostructuring of HgCdTe Ternary Compound.Distinguishing physical mechanisms using GISAXS experiments and linear theory: the importance of high wavenumbers.Surface Morphologies of Ti and Ti-Al-V Bombarded by 1.0-MeV Au+ IonsAnomalous behavior in temporal evolution of ripple wavelength under medium energy Ar+-ion bombardment on Si: A case of initial wavelength selectionIon-beam nanopatterning of silicon surfaces under codeposition of non-silicide-forming impurities
P2860
Nonuniversality due to inhomogeneous stress in semiconductor surface nanopatterning by low-energy ion-beam irradiation
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im April 2015 veröffentlichter wissenschaftlicher Artikel
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wetenschappelijk artikel
@nl
наукова стаття, опублікована у квітні 2015
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name
Nonuniversality due to inhomog ...... ow-energy ion-beam irradiation
@en
Nonuniversality due to inhomog ...... ow-energy ion-beam irradiation
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type
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Nonuniversality due to inhomog ...... ow-energy ion-beam irradiation
@en
Nonuniversality due to inhomog ...... ow-energy ion-beam irradiation
@nl
prefLabel
Nonuniversality due to inhomog ...... ow-energy ion-beam irradiation
@en
Nonuniversality due to inhomog ...... ow-energy ion-beam irradiation
@nl
P2093
P2860
P50
P1433
P1476
Nonuniversality due to inhomog ...... ow-energy ion-beam irradiation
@en
P2093
A. Moreno-Barrado
C. Ballesteros
J. Muñoz-García
L. Vázquez
P2860
P356
10.1103/PHYSREVB.91.155303
P407
P577
2015-04-13T00:00:00Z