about
Near-surface processing on AlGaN/GaN heterostructures: a nanoscale electrical and structural characterizationNanoscale electro-structural characterisation of ohmic contacts formed on p-type implanted 4H-SiCNanoscale electrical and structural modification induced by rapid thermal oxidation of AlGaN/GaN heterostructures.Thermodynamic Properties of Supported and Embedded Metallic Nanocrystals: Gold on/in SiO2.Atomic Force Microscopy Study of the Kinetic Roughening in Nanostructured Gold Films on SiO2.Advances in the fabrication of graphene transistors on flexible substrates.Impact of contact resistance on the electrical properties of MoS2 transistors at practical operating temperatures.In-situ monitoring by Raman spectroscopy of the thermal doping of graphene and MoS2 in O2-controlled atmosphere.Conduction Mechanisms at Interface of AlN/SiN Dielectric Stacks with AlGaN/GaN Heterostructures for Normally-off High Electron Mobility Transistors: Correlating Device Behavior with Nanoscale Interfaces Properties.Interface Electrical Properties of Al2O3 Thin Films on Graphene Obtained by Atomic Layer Deposition with an in Situ Seedlike Layer.Ambipolar MoS2 Transistors by Nanoscale Tailoring of Schottky Barrier Using Oxygen Plasma Functionalization.Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale.An Overview of Normally-Off GaN-Based High Electron Mobility Transistors.Nanoscale probing of the lateral homogeneity of donors concentration in nitridated SiO2/4H-SiC interfacesElectron trapping at SiO2/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysisOhmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings
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Q38990640-407D4E09-3EB7-4925-A3E0-429B8DE0FF47Q38991167-9D71D1B1-F1B3-4837-AA07-928FCB5FC755Q39295748-7F95658D-16AA-43DB-8A2B-BEAF4B8C9FD4Q39969503-E65BDB48-1307-4500-8267-B327A67F04F1Q41552848-D60E2D95-8615-4E0A-BEEF-2CBE4208BDBFQ42043762-AAED5E53-16CD-46EF-B1BF-6C1F9D65D796Q42181723-7F68EF0A-B505-4F7B-A027-8FE29651B48EQ42319172-4F7F2FB4-4578-43D4-B07E-3BFA11E72C25Q47664978-B1E89B0D-CE71-426D-BB3B-3EBE3A812F50Q48048653-3E5C3017-767E-4ADC-8ECA-8BB180299438Q48059827-3904D7CE-9F50-41AE-B141-E91D3C3CCC8FQ53147255-D6EB24F4-0CA7-4B9A-A553-2E5A959DEF88Q64969160-935F4A7B-7306-46F7-AB7F-ED85C6D2493AQ87712874-5512C935-F0BC-48A4-85FF-E5C8AFF8A544Q89418074-5037C96E-F192-4242-B336-A82100618C68Q90945095-8A59A4E2-7684-4CCA-8D2C-1201D433D5E3
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description
onderzoeker
@nl
researcher ORCID ID = 0000-0001-8632-0870
@en
name
Fabrizio Roccaforte
@ast
Fabrizio Roccaforte
@en
Fabrizio Roccaforte
@es
Fabrizio Roccaforte
@nl
type
label
Fabrizio Roccaforte
@ast
Fabrizio Roccaforte
@en
Fabrizio Roccaforte
@es
Fabrizio Roccaforte
@nl
prefLabel
Fabrizio Roccaforte
@ast
Fabrizio Roccaforte
@en
Fabrizio Roccaforte
@es
Fabrizio Roccaforte
@nl
P214
P106
P1153
7003320753
P214
P31
P496
0000-0001-8632-0870
P7859
viaf-5794144