Thermoelectric properties of highly efficient Bi-doped Mg 2 Si 1− x−y Sn x Ge y materials
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n-type thermoelectric material Mg2Sn0.75Ge0.25 for high power generationThermoelectric performance enhancement of Mg2Sn based solid solutions by band convergence and phonon scattering via Pb and Si/Ge substitution for Sn.Suppressing the bipolar contribution to the thermoelectric properties of Mg2Si0.4Sn0.6 by Ge substitution
P2860
Thermoelectric properties of highly efficient Bi-doped Mg 2 Si 1− x−y Sn x Ge y materials
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im September 2014 veröffentlichter wissenschaftlicher Artikel
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wetenschappelijk artikel
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наукова стаття, опублікована у вересні 2014
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Thermoelectric properties of highly efficient Bi-doped Mg 2 Si 1− x−y Sn x Ge y materials
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Thermoelectric properties of highly efficient Bi-doped Mg 2 Si 1− x−y Sn x Ge y materials
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Thermoelectric properties of highly efficient Bi-doped Mg 2 Si 1− x−y Sn x Ge y materials
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Thermoelectric properties of highly efficient Bi-doped Mg 2 Si 1− x−y Sn x Ge y materials
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Thermoelectric properties of highly efficient Bi-doped Mg 2 Si 1− x−y Sn x Ge y materials
@en
Thermoelectric properties of highly efficient Bi-doped Mg 2 Si 1− x−y Sn x Ge y materials
@nl
P2093
P1433
P1476
Thermoelectric properties of highly efficient Bi-doped Mg 2 Si 1− x−y Sn x Ge y materials
@en
P2093
Ch.B. Lioutas
E. Hatzikraniotis
E.C. Stefanaki
G.S. Polymeris
I. Giapintzakis
K.M. Paraskevopoulos
N.V. Vlachos
Th. Kyratsi
P356
10.1016/J.ACTAMAT.2014.04.060
P577
2014-09-01T00:00:00Z