about
Three-dimensional atom mapping of boron in implanted silicon.Atomic-scale redistribution of Pt during reactive diffusion in Ni (5% Pt)-Si contacts.Correlating Atom Probe Tomography with Atomic-Resolved Scanning Transmission Electron Microscopy: Example of Segregation at Silicon Grain Boundaries.Atom probe tomography studies on the Cu(In,ga)Se2 grain boundaries.Ag-segregation to dislocations in PbTe-based thermoelectric materials.Unexpected Ge-Ge Contacts in the Two-Dimensional Ge4 Se3 Te Phase and Analysis of Their Chemical Cause with the Density of Energy (DOE) Function.Role of Nanostructuring and Microstructuring in Silver Antimony Telluride Compounds for Thermoelectric Applications.Complex Nanotwin Substructure of an Asymmetric Σ9 Tilt Grain Boundary in a Silicon Polycrystal.Unique Bond Breaking in Crystalline Phase Change Materials and the Quest for Metavalent Bonding.Compositional and electrical properties of line and planar defects in Cu(In,Ga)Se2thin films for solar cells - a reviewCd and Impurity Redistribution at the CdS/CIGS Interface After Annealing of CIGS-Based Solar Cells Resolved by Atom Probe TomographyTailoring Thermoelectric Transport Properties of Ag-Alloyed PbTe: Effects of Microstructure EvolutionDetection of Cu2Zn5SnSe8 and Cu2Zn6SnSe9 phases in co-evaporated Cu2ZnSnSe4 thin-filmsHigh Performance n-type PbSe-CuSe Thermoelectrics through Conduction Band Engineering and Phonon SofteningInterface engineering and characterization at the atomic-scale of pure and mixed ion layer gas reaction buffer layers in chalcopyrite thin-film solar cellsGrain boundary characterization in multicrystalline silicon using joint EBSD, EBIC, and atom probe tomographyAtomic-scale distribution of impurities in CuInSe2-based thin-film solar cellsCharacterization of CIGS grain boundaries using Atom Probe TomographyCharacterization of Grain Boundaries in Cu(In,Ga)Se2Films Using Atom-Probe TomographyComparative atom probe study of Cu(In,Ga)Se2 thin-film solar cells deposited on soda-lime glass and mild steel substratesConfined and Chemically Flexible Grain Boundaries in Polycrystalline Compound SemiconductorsSputtering as a viable route for In2 S3 buffer layer deposition in high efficiency Cu(In,Ga)Se2 solar cellsCorrelative transmission Kikuchi diffraction and atom probe tomography study of Cu(In,Ga)Se2 grain boundariesClustering and nearest neighbour distances in atom-probe tomographyClustering and nearest neighbour distances in atom probe tomography: the influence of the interfacesEvidence of Enhanced Carrier Collection in Cu(In,Ga)Se2 Grain Boundaries: Correlation with MicrostructureRole of grain boundaries in Ge-Sb-Te based chalcogenide superlatticesInvestigating Bond Rupture in Resonantly Bonded Solids by Field Evaporation of Carbon Nanotubes
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Q33386414-E67ADE28-C6AE-48C0-9765-12717A09B609Q33425553-F2AE69D6-42D8-4C41-8E32-A084318DC3ADQ38755679-3D07703C-574E-43AC-BDED-2ECED79EADDFQ41195340-18FB420F-C55D-42D2-BCFF-F7109D671CF2Q47194644-94C37523-90E8-47AB-A05D-5F9AB7F9AFC5Q48047376-06001CF9-ECEE-42D3-8665-E20402C9ADA6Q48345576-98A00163-6CCA-4812-B8E3-89DE0866E741Q51600919-9F9D608A-5F27-47B8-B676-A614A671EAAEQ52639100-3AC7957C-8810-4D4B-B402-86CD52B44073Q56333194-DAFCF435-31DF-431B-9FDB-74474901A82DQ57776311-822AB633-9BF5-41B8-88D2-5435B2154400Q57795075-E66B1BC8-FFD6-4FA9-896F-08DA363EEC1AQ57795728-AEAEF28A-F095-4450-B867-CDB69ACBD7ACQ57803400-8415339F-4FF4-4C13-856B-BD2C0DDC3803Q58003777-56FAC8BE-B6BF-4BFF-8B81-8998D0CC54EDQ58003847-A2874026-127D-4B6D-8BBA-1EEB9CCFA3C5Q58004136-5E449782-5628-4C80-8457-E61BF4C521BAQ58004137-B7A0FFED-731D-47A2-8CDE-E2FA4F6D31F0Q58004139-46C9BFD8-1A8E-494C-91B6-A906CC9F08DCQ58004148-374FEC85-7F8A-422B-BF43-8A834210F244Q59456738-1C4F325F-410B-4A14-B5E3-D5DEF4CBA9F9Q62578034-015D9009-2B74-4004-A372-42BEFC747AFAQ62692704-4A2B6BCB-4FF8-420F-A660-994751D4A5B5Q84206864-794E1A84-AA27-4A6E-ACD9-519A70A40EE1Q84479624-CF8B70B6-9709-47FF-94F7-F9AC57868DF0Q88315167-72B7E05C-EE2B-400B-ADBF-093B25F298F9Q91625205-750D18CA-1C9A-4E81-A372-FCAE09A6E311Q91714779-18C4D97A-DC77-48ED-8CE6-6AF289205CA2
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description
onderzoeker
@nl
researcher ORCID ID = 0000-0001-6543-203X
@en
name
Oana Cojocaru-Mirédin
@ast
Oana Cojocaru-Mirédin
@en
Oana Cojocaru-Mirédin
@es
Oana Cojocaru-Mirédin
@nl
type
label
Oana Cojocaru-Mirédin
@ast
Oana Cojocaru-Mirédin
@en
Oana Cojocaru-Mirédin
@es
Oana Cojocaru-Mirédin
@nl
prefLabel
Oana Cojocaru-Mirédin
@ast
Oana Cojocaru-Mirédin
@en
Oana Cojocaru-Mirédin
@es
Oana Cojocaru-Mirédin
@nl
P106
P1153
56962730200
P31
P496
0000-0001-6543-203X