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Significant improvements in InGaN/GaN nano-photoelectrodes for hydrogen generation by structure and polarization optimizationRoom temperature plasmonic lasing in a continuous wave operation mode from an InGaN/GaN single nanorod with a low threshold.Room temperature continuous-wave green lasing from an InGaN microdisk on siliconHybrid III-nitride/organic semiconductor nanostructure with high efficiency nonradiative energy transfer for white light emitters.Bloch surface plasmon enhanced blue emission from InGaN/GaN light-emitting diode structures with Al-coated GaN nanorods.Great enhancement in the excitonic recombination and light extraction of highly ordered InGaN/GaN elliptic nanorod arrays on a wafer scale.Large-scale fabrication and luminescence properties of GaN nanostructures by a soft UV-curing nanoimprint lithographyTemperature dependence of the point defect properties of GaN thin films studied by terahertz time-domain spectroscopyComprehensive study of the metal-insulator transition in pulsed laser deposited epitaxial VO2 thin filmsSuppression of thermal conductivity in InxGa1−xN alloys by nanometer-scale disorderComment on “Radiative and nonradiative recombination process in InN films grown by metal organic chemical vapor deposition” [Appl. Phys. Lett. 86, 142104 (2005)]Hybrid Light Emitters and UV Solar-Blind Avalanche Photodiodes based on III-Nitride SemiconductorsElectron-Beam-Driven III-Nitride Plasmonic Nanolasers in the Deep-UV and Visible Region
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P50
description
researcher ORCID ID = 0000-0002-9495-6809
@en
name
Bin Liu
@ast
Bin Liu
@en
Bin Liu
@es
Bin Liu
@nl
type
label
Bin Liu
@ast
Bin Liu
@en
Bin Liu
@es
Bin Liu
@nl
prefLabel
Bin Liu
@ast
Bin Liu
@en
Bin Liu
@es
Bin Liu
@nl
P106
P31
P496
0000-0002-9495-6809