Nanoscale Tailoring of the Polarization Properties of Dilute-Nitride Semiconductors via H-Assisted Strain Engineering
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Nanoscale Tailoring of the Polarization Properties of Dilute-Nitride Semiconductors via H-Assisted Strain Engineering
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wetenschappelijk artikel
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наукова стаття, опублікована в грудні 2014
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Nanoscale Tailoring of the Pol ...... H-Assisted Strain Engineering
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Nanoscale Tailoring of the Pol ...... H-Assisted Strain Engineering
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Nanoscale Tailoring of the Pol ...... H-Assisted Strain Engineering
@en
Nanoscale Tailoring of the Pol ...... H-Assisted Strain Engineering
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Nanoscale Tailoring of the Pol ...... H-Assisted Strain Engineering
@en
Nanoscale Tailoring of the Pol ...... H-Assisted Strain Engineering
@nl
P2093
P2860
P50
P1476
Nanoscale Tailoring of the Pol ...... H-Assisted Strain Engineering
@en
P2093
Antonio Polimeni
Faustino Martelli
Silvia Rubini
Simone Birindelli
P2860
P356
10.1103/PHYSREVAPPLIED.2.064007
P577
2014-12-22T00:00:00Z