Powerful recombination centers resulting from reactions of hydrogen with carbon-oxygen defects in n-type Czochralski-grown silicon
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Powerful recombination centers resulting from reactions of hydrogen with carbon-oxygen defects in n-type Czochralski-grown silicon
description
im Juni 2017 veröffentlicher wissenschaftlicher Artikel
@de
wetenschappelijk artikel
@nl
наукова стаття, опублікована в червні 2017
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name
Powerful recombination centers ...... type Czochralski-grown silicon
@en
Powerful recombination centers ...... type Czochralski-grown silicon
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type
label
Powerful recombination centers ...... type Czochralski-grown silicon
@en
Powerful recombination centers ...... type Czochralski-grown silicon
@nl
prefLabel
Powerful recombination centers ...... type Czochralski-grown silicon
@en
Powerful recombination centers ...... type Czochralski-grown silicon
@nl
P2093
P2860
P356
P1476
Powerful recombination centers ...... type Czochralski-grown silicon
@en
P2093
A. R. Peaker
B. G. Svensson
E. V. Monakhov
L. I. Murin
M. P. Halsall
M. Vaqueiro-Contreras
R. Falster
V. P. Markevich
P2860
P304
P356
10.1002/PSSR.201700133
P577
2017-06-27T00:00:00Z