about
Resistive graphene humidity sensors with rapid and direct electrical readout.Precision cutting and patterning of graphene with helium ions.Bistability and oscillatory motion of natural nanomembranes appearing within monolayer graphene on silicon dioxide.Bilayer insulator tunnel barriers for graphene-based vertical hot-electron transistors.Noninvasive Scanning Raman Spectroscopy and Tomography for Graphene Membrane CharacterizationPiezoresistive Properties of Suspended Graphene Membranes under Uniaxial and Biaxial Strain in Nanoelectromechanical Pressure SensorsElectrical properties of graphene-metal contacts.High Photocurrent in Gated Graphene-Silicon Hybrid PhotodiodesHeterojunction hybrid devices from vapor phase grown MoS2.Self-organized growth of graphene nanomesh with increased gas sensitivity.A graphene-based hot electron transistor.Efficient inkjet printing of graphene.Strain Gauges Based on CVD Graphene Layers and Exfoliated Graphene Nanoplatelets with Enhanced Reproducibility and Scalability for Large Quantities.High-Performance Hybrid Electronic Devices from Layered PtSe2 Films Grown at Low Temperature.Residual metallic contamination of transferred chemical vapor deposited graphene.Field-Effect Transistors Based on Networks of Highly Aligned, Chemically Synthesized N = 7 Armchair Graphene Nanoribbons.Direct observation of grain boundaries in graphene through vapor hydrofluoric acid (VHF) exposure.Highly Sensitive Electromechanical Piezoresistive Pressure Sensors Based on Large-Area Layered PtSe2 Films.Monolithically Integrated Perovskite Semiconductor Lasers on Silicon Photonic Chips by Scalable Top-Down FabricationThe Influence of Humidity on Contact Resistance in Graphene DevicesGate-Activated Photoresponse in a Graphene p–n JunctionGrowth-Induced Strain in Chemical Vapor Deposited Monolayer MoS2 : Experimental and Theoretical InvestigationSession 31: Solid-state and nanoelectronic devices - silicon nanowire transistorsA simple route towards high-concentration surfactant-free graphene dispersionsIntrinsic and extrinsic corrugation of monolayer graphene deposited onSiO2Wide Spectral Photoresponse of Layered Platinum Diselenide-Based PhotodiodesEtching of graphene devices with a helium ion beamInkjet printing of 2D layered materialsFlexible hybrid graphene/a-Si:H multispectral photodetectorsDielectric Properties and Ion Transport in Layered MoS2 Grown by Vapor-Phase Sulfurization for Potential Applications in NanoelectronicsReconfigurable THz Plasmonic Antenna Based on Few-Layer Graphene with High Radiation EfficiencyIntegration of Nanomaterials into Three-Dimensional Vertical ArchitecturesGate-tunable graphene-based Hall sensors on flexible substrates with increased sensitivityIntegrating graphene into semiconductor fabrication linesElectron Transport across Vertical Silicon/MoS2/Graphene Heterostructures: Towards Efficient Emitter Diodes for Graphene Base Hot Electron TransistorsSuspended Graphene Membranes with Attached Silicon Proof Masses as Piezoresistive Nanoelectromechanical Systems Accelerometers
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description
researcher ORCID ID = 0000-0003-4552-2411
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wetenschapper
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name
Max C Lemme
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Max C Lemme
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Max C Lemme
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Max C Lemme
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Max C Lemme
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Max C Lemme
@en
Max C Lemme
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Max C Lemme
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prefLabel
Max C Lemme
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Max C Lemme
@en
Max C Lemme
@es
Max C Lemme
@nl
P214
P106
P1153
6602239782
P214
P2456
P31
P496
0000-0003-4552-2411
P7859
viaf-40442862