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Surface effects of vapour-liquid-solid driven Bi surface droplets formed during molecular-beam-epitaxy of GaAsBi.Unexpected formation of a hierarchical structure in ternary InGaAs nanowires via "one-pot" growth.Growth of InAs Quantum Dots on GaAs (511)A Substrates: The Competition between Thermal Dynamics and Kinetics.μ-EXAFS, μ-XRF, and μ-PL Characterization of a Multi-Quantum-Well Electroabsorption Modulated Laser Realized via Selective Area GrowthGrowth and properties of self-catalyzed (In,Mn)As nanowiresCrystallographically driven Au catalyst movement during growth of InAs/GaAs axial nanowire heterostructures
P2860
description
im März 2009 veröffentlichter wissenschaftlicher Artikel
@de
scientific article published on 01 March 2009
@en
wetenschappelijk artikel
@nl
наукова стаття, опублікована в лютому 2009
@uk
name
Evolution of Epitaxial InAs Nanowires on GaAs (111)B
@en
Evolution of Epitaxial InAs Nanowires on GaAs
@nl
type
label
Evolution of Epitaxial InAs Nanowires on GaAs (111)B
@en
Evolution of Epitaxial InAs Nanowires on GaAs
@nl
prefLabel
Evolution of Epitaxial InAs Nanowires on GaAs (111)B
@en
Evolution of Epitaxial InAs Nanowires on GaAs
@nl
P2093
P50
P356
P1433
P1476
Evolution of epitaxial InAs nanowires on GaAs 111B
@en
P2093
P304
P356
10.1002/SMLL.200800690
P577
2009-03-01T00:00:00Z