Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors
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Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors
description
article
@en
im Januar 2018 veröffentlichter wissenschaftlicher Artikel
@de
wetenschappelijk artikel
@nl
наукова стаття, опублікована в січні 2018
@uk
name
Nanoscale structural and chemi ...... cture field effect transistors
@en
Nanoscale structural and chemi ...... cture field effect transistors
@nl
type
label
Nanoscale structural and chemi ...... cture field effect transistors
@en
Nanoscale structural and chemi ...... cture field effect transistors
@nl
prefLabel
Nanoscale structural and chemi ...... cture field effect transistors
@en
Nanoscale structural and chemi ...... cture field effect transistors
@nl
P2093
P2860
P50
P356
P1476
Nanoscale structural and chemi ...... cture field effect transistors
@en
P2093
David J. Wallis
Ivor Guiney
Jonathan S. Barnard
Kean B. Lee
Martin Frentrup
Michael P. Moody
Paul A. Bagot
Peter A. Houston
Zaffar H. Zaidi
P2860
P304
P356
10.1063/1.5006255
P577
2018-01-14T00:00:00Z