about
Measurements of the effective mass and scattering times of composite fermions from magnetotransport analysisInterfacial Engineering of Semiconductor-Superconductor Junctions for High Performance Micro-Coolers.Heteroepitaxial Growth of Ferromagnetic MnSb(0001) Films on Ge/Si(111) Virtual SubstratesElectrical isolation of dislocations in Ge layers on Si(001) substrates through CMOS-compatible suspended structures.Comparison of cross-sectional transmission electron microscope studies of thin germanium epilayers grown on differently oriented silicon wafers.Fractional Quantum Hall States in a Ge Quantum Well.Modulation of the absorption coefficient at 1.3 μm in Ge/SiGe multiple quantum well heterostructures on silicon.Temperature-dependent high-current breakdown of the quantum Hall effectSuperconducting platinum silicide for electron cooling in siliconUltra high hole mobilities in a pure strained Ge quantum wellMagnetoresistance in dilute p-Si/SiGe in parallel and tilted magnetic fieldsTemperature dependence of the breakdown of the quantum Hall effect studied by induced currentsP-Si/sub 0.3/Ge/sub 0.7/and p-Si/sub 0.2/Ge/sub 0.8/ MOSFETs of enhanced performanceReduced 1/f noise at 293 K in 0.55 μm p-Si/sub 0.3/Ge/sub 0.7/ hetero-MOSFETsOvercoming Low Ge Ionization and Erosion Rate Variation for Quantitative Ultralow Energy Secondary Ion Mass Spectrometry Depth Profiles of Si1–xGex/Ge Quantum Well StructuresOptimization of epitaxial growth for thick Ge-on-Si structures used for single photon avalanche diode applicationsDesign and performance of a prototype mesa-geometry Ge-on-Si single-photon avalanche diode detector at 1310 nm and 1550 nm wavelengthsIntersubband resonant scattering in GaAs-Ga1-xAlxAs heterojunctionsHigh-field magnetoresistance in GaAs/Ga0.7Al0.3As heterojunctions arising from elastic and inelastic scatteringBrummell et al. replyCollapse of high field magnetophonon resonance in GaAs-GaAlAs heterojunctionsPulsed-magnetic-field measurements of the composite-fermion effective mass
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P50
description
researcher ORCID ID = 0000-0002-7185-2046
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wetenschapper
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name
David Leadley
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David Leadley
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David Leadley
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David Leadley
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David Leadley
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David Leadley
@de
David Leadley
@en
David Leadley
@es
David Leadley
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David Leadley
@id
type
label
David Leadley
@ast
David Leadley
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David Leadley
@co
David Leadley
@cs
David Leadley
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David Leadley
@de
David Leadley
@en
David Leadley
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David Leadley
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David Leadley
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D.R. Leadley
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David R. Leadley
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David Leadley
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David Leadley
@br
David Leadley
@co
David Leadley
@cs
David Leadley
@da
David Leadley
@de
David Leadley
@en
David Leadley
@es
David Leadley
@fr
David Leadley
@id
P1153
6701796029
P31
P496
0000-0002-7185-2046