about
Coherent control of single spins in silicon carbide at room temperatureEnhancing quantum sensing sensitivity by a quantum memoryReadout and control of a single nuclear spin with a metastable electron spin ancilla.Scalable Quantum Photonics with Single Color Centers in Silicon Carbide.Direct quantum process tomography via measuring sequential weak values of incompatible observables.Publisher Correction: Direct quantum process tomography via measuring sequential weak values of incompatible observables.Molecular-sized fluorescent nanodiamondsRoom Temperature Electrical Control of Single Photon Sources at 4H-SiC SurfaceBright single photon sources in lateral silicon carbide light emitting diodesScalable Quantum Photonics with Single Color Centers in Silicon CarbideVector Magnetometry Using Silicon Vacancies in4H-SiC Under Ambient ConditionsMaterial platforms for spin-based photonic quantum technologiesElectrically controllable position-controlled color centers created in SiC pn junction diode by proton beam writingExperimental preparation and characterization of four-dimensional quantum states using polarization and time-bin modes of a single photonQuantum Properties of Dichroic Silicon Vacancies in Silicon CarbideVector magnetometry based onS=32electronic spinsElectron spin decoherence in silicon carbide nuclear spin bathBoosting nanodiamond fluorescence: towards development of brighter probesInvestigation of NV centers in diamond nanocrystallites and nanopillarsModulation frequency dependence of continuous-wave optically/electrically detected magnetic resonanceElectrically detected crystal orientation dependent spin-Rabi beat oscillation of c-Si(111)/SiO2interface statesTuning Hyperfine Fields in Conjugated Polymers for Coherent Organic SpintronicsHyperfine-Field-Mediated Spin Beating in Electrostatically Bound Charge Carrier PairsHigh-fidelity spin and optical control of single silicon-vacancy centres in silicon carbideElectrical Charge State Manipulation of Single Silicon Vacancies in a Silicon Carbide Quantum Optoelectronic DeviceCoherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditionsInformationally symmetrical Bell state preparation and measurement
P50
Q29307394-36F3B195-6851-49FF-BDE1-F3041AD12975Q37181216-1BD200CA-35F7-4EA0-9FE2-EE445A0244A5Q44477166-68577611-2A61-4386-982F-C5667A502776Q46221738-103C0564-223D-4B5D-9292-827714024B52Q48240043-A2AA0B0B-D4DF-44F5-9684-3D8BAA7963B4Q55361022-CB6AC10D-7F0A-4A7E-8D5D-EB9046758841Q59434040-071311F7-3548-430D-9597-580869CB91DDQ59441765-758A747F-9D6A-4B71-8FA7-4690285BE8B4Q59441771-6FF8273E-6EDB-4A1A-AF84-90EE7A3C0BE3Q59441790-ED7B3A89-CE27-4838-B879-DAA826CEF593Q59441824-067F54B5-7453-41AD-8952-07ABF2637A75Q62049496-138A7143-5B04-469E-8041-CAFFAE59CDFBQ62049497-C4FA1462-1F4E-4148-A649-0F74B7DB1C9DQ62049498-DB430C43-3304-4FD0-A71B-D52196293096Q62049499-11F29CA2-8ED4-4DDE-8CDB-CE342D1EB219Q62049500-CEC321FF-B29C-43A3-B54C-27F669242F5BQ62049501-05D28CFC-B571-4ACF-B2F6-5E8D8B4ECA78Q62049502-048E552A-CD95-496A-8D4F-1ACC5BDCD20DQ62049503-01EE6470-F15C-450D-99AF-6056E3100742Q62049505-F527729A-AA81-4D21-A6E9-00AFC0D7BAA0Q62049506-02D0ABEE-9952-4377-A039-27E940E73FB8Q62049507-722732FE-45B6-4086-BB67-D46498387ED7Q62049508-E5E12A7A-AAF8-41D9-A6D3-2D165EB4977FQ64086237-167B0687-C5E2-4BAB-933B-24CA5E661D97Q90162641-FAC9DB5F-B737-4346-9EB7-9CABB84F496EQ91717476-9A3A42D6-8B49-47D9-9033-6B3A1878A730Q93332164-6148C1E3-3BDF-4F32-B7F6-0B593E6D2D38
P50
description
researcher ORCID ID = 0000-0003-1777-980X
@en
name
Sang-Yun Lee
@ast
Sang-Yun Lee
@en
Sang-Yun Lee
@es
Sang-Yun Lee
@nl
type
label
Sang-Yun Lee
@ast
Sang-Yun Lee
@en
Sang-Yun Lee
@es
Sang-Yun Lee
@nl
prefLabel
Sang-Yun Lee
@ast
Sang-Yun Lee
@en
Sang-Yun Lee
@es
Sang-Yun Lee
@nl
P1153
56872471800
P31
P496
0000-0003-1777-980X