Origin, symmetry, and temperature dependence of the perturbation induced by Si extrinsic defects on the Sn/Si(111) α surface: A scanning tunneling microscopy study
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Origin, symmetry, and temperature dependence of the perturbation induced by Si extrinsic defects on the Sn/Si(111) α surface: A scanning tunneling microscopy study
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wetenschappelijk artikel
@nl
наукова стаття, опублікована в липні 2000
@uk
name
Origin, symmetry, and temperat ...... ing tunneling microscopy study
@en
Origin, symmetry, and temperat ...... ing tunneling microscopy study
@nl
type
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Origin, symmetry, and temperat ...... ing tunneling microscopy study
@en
Origin, symmetry, and temperat ...... ing tunneling microscopy study
@nl
prefLabel
Origin, symmetry, and temperat ...... ing tunneling microscopy study
@en
Origin, symmetry, and temperat ...... ing tunneling microscopy study
@nl
P2093
P50
P356
P1476
Origin, symmetry, and temperat ...... ing tunneling microscopy study
@en
P2093
A. Continenza
L. Ottaviano
M. Crivellari
P304
P356
10.1116/1.582451
P577
2000-07-01T00:00:00Z