about
Elementary process for CVD graphene on Cu(110): size-selective carbon clusters.Low temperature critical growth of high quality nitrogen doped graphene on dielectrics by plasma-enhanced chemical vapor deposition.Critical crystal growth of graphene on dielectric substrates at low temperature for electronic devices.Copper-Vapor-Assisted Rapid Synthesis of Large AB-Stacked Bilayer Graphene Domains on Cu-Ni Alloy.Growth intermediates for CVD graphene on Cu(111): carbon clusters and defective grapheneLow-temperature, bottom-up synthesis of graphene via a radical-coupling reactionHow Graphene Islands Are Unidirectionally Aligned on the Ge(110) SurfaceEpitaxial Growth of Flat, Metallic Monolayer Phosphorene on Metal OxideConformational Transitions of Phase-Separated Binary Molecules Assisted by Surface DehalogenationRecent Advances in Tin: From Two-Dimensional Quantum Spin Hall Insulator to Bulk Dirac SemimetalImaging and Dynamics of Water Hexamer Confined in NanoporesTwo-dimensional black phosphorus: its fabrication, functionalization and applications
P50
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P50
description
researcher ORCID ID = 0000-0003-0502-4346
@en
name
Tianchao Niu
@ast
Tianchao Niu
@en
Tianchao Niu
@es
Tianchao Niu
@nl
type
label
Tianchao Niu
@ast
Tianchao Niu
@en
Tianchao Niu
@es
Tianchao Niu
@nl
prefLabel
Tianchao Niu
@ast
Tianchao Niu
@en
Tianchao Niu
@es
Tianchao Niu
@nl
P31
P496
0000-0003-0502-4346