Magnetotransport of delta-doped In0.57Ga0.43As on InP(001) grown between 390 and 575° C by molecular beam epitaxy
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Magnetotransport of delta-doped In0.57Ga0.43As on InP(001) grown between 390 and 575° C by molecular beam epitaxy
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im Mai 1998 veröffentlichter wissenschaftlicher Artikel
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wetenschappelijk artikel
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наукова стаття, опублікована в травні 1998
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Magnetotransport of delta-doped In0.57Ga0.43As on InP
@nl
Magnetotransport of delta-dope ...... 5° C by molecular beam epitaxy
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type
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Magnetotransport of delta-doped In0.57Ga0.43As on InP
@nl
Magnetotransport of delta-dope ...... 5° C by molecular beam epitaxy
@en
prefLabel
Magnetotransport of delta-doped In0.57Ga0.43As on InP
@nl
Magnetotransport of delta-dope ...... 5° C by molecular beam epitaxy
@en
P2093
P356
P1476
Magnetotransport of delta-dope ...... 5° C by molecular beam epitaxy
@en
P2093
Adam Bryant
Marc Ilegems
Mathias Beck
P304
P356
10.1063/1.121430
P407
P577
1998-05-18T00:00:00Z