Gated-Controlled Rectification of a Self-Assembled Monolayer-Based Transistor
about
Gated-Controlled Rectification of a Self-Assembled Monolayer-Based Transistor
description
2013 nî lūn-bûn
@nan
2013年の論文
@ja
2013年学术文章
@wuu
2013年学术文章
@zh
2013年学术文章
@zh-cn
2013年学术文章
@zh-hans
2013年学术文章
@zh-my
2013年学术文章
@zh-sg
2013年學術文章
@yue
2013年學術文章
@zh-hant
name
Gated-Controlled Rectification of a Self-Assembled Monolayer-Based Transistor
@en
Gated-Controlled Rectification of a Self-Assembled Monolayer-Based Transistor
@nl
type
label
Gated-Controlled Rectification of a Self-Assembled Monolayer-Based Transistor
@en
Gated-Controlled Rectification of a Self-Assembled Monolayer-Based Transistor
@nl
prefLabel
Gated-Controlled Rectification of a Self-Assembled Monolayer-Based Transistor
@en
Gated-Controlled Rectification of a Self-Assembled Monolayer-Based Transistor
@nl
P2093
P356
P1476
Gated-Controlled Rectification of a Self-Assembled Monolayer-Based Transistor
@en
P2093
Elad D. Mentovich
Itsik Kalifa
Natalie Rosenberg-Shraga
Shachar Richter
Vladimiro Mujica
P304
P356
10.1021/JP311875G
P577
2013-04-17T00:00:00Z