Tin Disulfide—An Emerging Layered Metal Dichalcogenide Semiconductor: Materials Properties and Device Characteristics
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Tin Disulfide—An Emerging Layered Metal Dichalcogenide Semiconductor: Materials Properties and Device Characteristics
description
article
@en
im September 2014 veröffentlichter wissenschaftlicher Artikel
@de
wetenschappelijk artikel
@nl
наукова стаття, опублікована у вересні 2014
@uk
name
Tin Disulfide—An Emerging Laye ...... ies and Device Characteristics
@en
Tin Disulfide—An Emerging Laye ...... ies and Device Characteristics
@nl
type
label
Tin Disulfide—An Emerging Laye ...... ies and Device Characteristics
@en
Tin Disulfide—An Emerging Laye ...... ies and Device Characteristics
@nl
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Tin Disulfide—An Emerging Laye ...... ies and Device Characteristics
@en
Tin Disulfide—An Emerging Laye ...... ies and Device Characteristics
@nl
P2093
P356
P1433
P1476
Tin Disulfide—An Emerging Laye ...... ies and Device Characteristics
@en
P2093
Bruce A. Parkinson
Darshana Wickramaratne
David A. Racke
Eli Sutter
Mahesh R. Neupane
Mircea Cotlet
Oliver L.A. Monti
Peter Sutter
Roger K. Lake
Yuan Huang
P304
10743-10755
P356
10.1021/NN504481R
P407
P577
2014-09-29T00:00:00Z