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Photodetectors based on intersubband transitions using III-nitride superlattice structures.Active linewidth-narrowing of a mid-infrared quantum cascade laser without optical reference.Quantum Cascade DetectorsTerahertz range quantum well infrared photodetectorContinuous-wave operation of far-infrared quantum cascade lasersCoupling of intersubband transitions to zone-folded acoustic phonons in a GaN/AlN superlatticeIntersubband spectroscopy probing higher order interminiband transitions in AlN-GaN-based superlatticesSi-interdiffusion in heavily doped AlN-GaN-based quantum well intersubband photodetectorsIntersubband Transition-Based Processes and Devices in AlN/GaN-Based HeterostructuresPerformance Improvement of AlN–GaN-Based Intersubband Detectors by Using Quantum DotsPerformance improvement of AlN/GaN-based intersubband detectors thanks to quantum dot active regionsMonolithically integrated UV/IR-photodetectors based on an AlN/GaN-based superlattice grown on an AlGaN buffer layerAlN/GaN-superlattice structures for the fabrication of intersubband detectors in the telecom wavelength rangeGaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performanceHigh frequency measurements on an AlN∕GaN-based intersubband detector at 1550 and 780nmLatest developments in GaN-based quantum devices for infrared optoelectronicsMBE growth of AlN/GaN-based photovoltaic intersubband photodetectorsMonolithically integrated AlGaN/GaN/AlN-based solar-blind ultraviolet and near-infrared detectorsGaN/AlN electro-optical modulator prototype at telecommunication wavelengthsHigh frequency (f=2.37 GHz) room temperature operation of 1.55 [micro sign]m AlN∕GaN-based intersubband detectorOptically nonlinear effects in intersubband transitions of GaN∕AlN-based superlattice structuresElectrically adjustable intersubband absorption of a GaN∕AlN superlattice grown on a transistorlike structureHigh-quality AlN∕GaN-superlattice structures for the fabrication of narrow-band 1.4 μm photovoltaic intersubband detectorsMBE growth of nitride-based photovoltaic intersubband detectors
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description
onderzoeker
@nl
researcher
@en
հետազոտող
@hy
name
Daniel Hofstetter
@ast
Daniel Hofstetter
@en
Daniel Hofstetter
@es
Daniel Hofstetter
@nl
type
label
Daniel Hofstetter
@ast
Daniel Hofstetter
@en
Daniel Hofstetter
@es
Daniel Hofstetter
@nl
prefLabel
Daniel Hofstetter
@ast
Daniel Hofstetter
@en
Daniel Hofstetter
@es
Daniel Hofstetter
@nl
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P1153
7006857423
P21
P31
P496
0000-0003-4948-0853