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Piezoresistive effect in p-type 3C-SiC at high temperatures characterized using Joule heatingKinetic surface roughening and wafer bow control in heteroepitaxial growth of 3C-SiC on Si(111) substratesVertically Conductive Single-Crystal SiC-Based Bragg Reflector Grown on Si WaferExcellent Rectifying Properties of the n-3C-SiC/p-Si Heterojunction Subjected to High Temperature Annealing for Electronics, MEMS, and LED Applications.Description and Verification of the Fundamental Current Mechanisms in Silicon Carbide Schottky Barrier DiodesInfluence of various plasma treatment on the properties of carbon nanotubes for composite applications
P50
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研究者
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Sima Dimitrijev
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Sima Dimitrijev
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Sima Dimitrijev
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Sima Dimitrijev
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Sima Dimitrijev
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Sima Dimitrijev
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Sima Dimitrijev
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Sima Dimitrijev
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Sima Dimitrijev
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Sima Dimitrijev
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Sima Dimitrijev
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Sima Dimitrijev
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P1153
7005567291
P31
P496
0000-0002-4514-0336