about
Atom-Scale Reaction Pathways and Free-Energy Landscapes in Oxygen Plasma Etching of Graphene.A Novel Intrinsic Interface State Controlled by Atomic Stacking Sequence at Interfaces of SiC/SiO2.Double-Metal-Ion/Single-Metal-Ion Mechanisms of the Cleavage Reaction of Ribozymes: First-Principles Molecular Dynamics Simulations of a Fully Hydrated Model System.Mechanisms of diffusion of boron impurities in SiO2Atomic and electronic structures of N-incorporated Si oxidesEnergetics and electronic structures of encapsulated C60 in a carbon nanotubeValidity of the broken-bond model for the DX center in GaAsMicroscopic mechanism of atomic diffusion in Si under pressureElectronic structures of solid BC59Real-space-partitioned separable pseudopotentialEnergetics and local vibrations of the DX center in GaAsChemical trends and s-p hybridization in the DX center in GaAsDesign of C60-graphite cointercalation compoundsElectronic structure of the superatom: A quasiatomic system based on a semiconductor heterostructureCohesive mechanism and energy bands of solid C60Vacancy in Si: Successful description within the local-density approximationSr6C60 and Ba6C60: Semimetallic fulleridesDimer exchange mechanism for substitutional As adsorption on Si(100)Diffusion and dimer exchange in surfactant-mediated epitaxial growthResonant bonds in symmetry-lowering distortion around a Si divacancyStructures of steps and appearances of {311} facets on Si(100) surfacesSaito and Oshiyama replyMagnetic ordering in hexagonally bonded sheets with first-row elementsCurvature-induced metallization of double-walled semiconducting zigzag carbon nanotubesE' centers in alpha quartz in the absence of oxygen vacancies: a first-principles molecular-dynamics studyDX center: Crossover of deep and shallow states in Si-doped AlxGa1-xAsStability and electronic structure of ultrathin-layer superlattices: (GaAs)n/(AlAs)nSpin-polarized electronic structure of Cr impurities in ZnSStable atomic geometries of oxygen microclusters in siliconElectronic structure of a modulation-doped spherical semiconductor heterostructure with mesoscopic dimensionsReaction pathway for Sb-dimer rotation in conversion of Sb4 precursors on Si(001)Scanning-tunneling-microscopy images of Ge adsorbed on an As-covered Si(001) surfaceRole of Ge surface segregation in Si/Ge interfacial ordering: Interface formation on a monohydride surfaceElectronic structure of Si46 and Na2Ba6Si46Structures and reactions of missing dimers in epitaxial growth of Ge on Si(100)Lifetimes of positrons trapped at Si vacanciesAtomic and electronic structures of an interface between silicon and beta -cristobaliteAtomic and electronic structures of oxygen on Si(100) surfaces: Metastable adsorption sitesElectronic structure of the silicon divacancyEnergetics in the initial stage of oxidation of silicon
P50
Q40633054-AC78E0FA-7335-4CC8-975F-4C38133E8747Q48054200-4FB8395B-A2C2-4B22-B63F-4AADDA59D586Q50096234-D700E049-B60B-4DAA-AF60-AC82BB610FF6Q73117049-EC611819-4E98-4D1F-B967-62B0F24BE017Q73817758-E9859B38-2050-45F1-98BD-92B74905B9D0Q73821231-E25F5DE3-7E6E-4CC6-AB6A-C83C2901948CQ74357228-CE572EE2-41A9-460B-88B0-AB4D0314A3D6Q74366342-3AA27BCB-F214-4269-951E-6EDF0154A41AQ74369887-1A434CC4-AE1D-40BF-8445-26608AB3510BQ74370508-B672F15D-8AB4-45EC-B497-91BE371881BAQ74378851-BA2391DD-DB06-4AA1-A08A-C816C785FB2EQ74388339-040E27BF-A4DB-48E3-BE76-34B14A70950BQ74404951-EBBD2227-802A-4CEC-B7B9-F2D0F4C7C92EQ74475431-C17474D4-DD3F-4D3D-9E26-EFDC73B75973Q74507560-148A3431-2242-4E92-A70A-D06117DE0F69Q74513315-BB4BC481-1DD9-4B55-91A9-43082A459C60Q74538339-7F78CCF0-7B1F-4740-A34C-386AD1EF5ED3Q74543102-3477D33E-C856-4292-9F35-60C5108EF620Q74547652-19B06F38-C8E5-43CB-BF29-D2FC9989D3A7Q74554312-7D0D58C7-6EEF-4B9A-A9D8-FF9F2E333A3AQ74555219-1ABD3550-9AE3-41A8-A8A5-E05055A95800Q74558278-FFADD6E8-B3C0-4EC1-AA99-9063C0D19DDDQ74579654-8CF10D59-939E-4C16-A8B9-2C6A9FEB184BQ75189744-BFD3B17D-B762-40C0-A2BE-248EAD1C4BF8Q75190033-15968D94-8514-474F-90FB-1C59ADDB22F4Q77975687-EC56D972-9C75-45B0-B4C5-D8C6D6B72A4EQ77990287-DB33C93A-D265-4C61-9BCD-D6CE428C4CB5Q77999419-55C552AB-A1B9-4B45-9086-45D927363368Q78004114-49307082-665D-48A7-8FE6-2C8E9F383DCEQ78007211-AA0B2F7A-FF17-4C91-8C4F-C2220B99C0B0Q78113448-BA960F40-E360-4E08-A03E-1418815F7B24Q78116189-9B7CA5D0-552F-4FB6-8940-AB331B74B8ABQ78127189-15ABAA46-E1F8-4156-AB4D-859FFA8C6FC8Q78129213-69BA9545-54BD-40F0-B99F-B2B81E9AE706Q78133553-D927A5AE-D86C-4F82-A1FB-5108B72E53FCQ78144818-AECD7CC6-D9D5-47EA-A462-813B957F3C1CQ78193464-0197B193-C281-4722-88B4-CAE155FBB21DQ78193487-5F221D43-0E9F-44B4-B3F6-D75B1876327CQ78200087-2810EBFE-01A3-4F9C-9EF9-3187D8E79C91Q78204322-7E3E3A97-10A0-469B-86CB-7BC5C60D7BF9
P50
description
researcher
@en
name
Atsushi Oshiyama
@en
Atsushi Oshiyama
@nl
type
label
Atsushi Oshiyama
@en
Atsushi Oshiyama
@nl
prefLabel
Atsushi Oshiyama
@en
Atsushi Oshiyama
@nl
P108
P106
P31
P496
0000-0002-7279-4124