about
Silicene nanomeshSub-10 nm gate length graphene transistors: operating at terahertz frequencies with current saturation.Does the Dirac cone exist in silicene on metal substrates?Quasiparticle and optical properties of strained stanene and stanane.Tunable band gap and doping type in silicene by surface adsorption: towards tunneling transistors.Tunable and sizable band gap in silicene by surface adsorption.Closing the bandgap for III-V nitrides toward mid-infrared and THz applications.Metallic MoN Layer and its Application as Anode for Lithium-ion Batteries.Schottky Barriers in Bilayer Phosphorene Transistors.Electronic properties of layered phosphorus heterostructures.Can a Black Phosphorus Schottky Barrier Transistor Be Good Enough?Graphdiyne-metal contacts and graphdiyne transistors.Structural and electronic properties of bilayer and trilayer graphdiynePath Integral MetadynamicsIntrinsic region length scaling of heavily doped carbon nanotube p-i-n junctions
P50
Q27309067-C59C6A43-88DB-42CE-B8FA-4C23E2D5423EQ30458171-39B5DEF7-B75D-4FC9-AD7F-74E0E1AE0833Q33813609-84A1E659-19A1-4CFF-9985-C57DE4848641Q33819106-32FA0008-D3C8-4B3F-AB55-7B3B3871DA85Q34422849-EB33E360-7F27-4F81-9F00-16A5D194D15DQ36395779-D980C9E0-25A8-404D-8DE3-09521FC002F9Q41636471-75EAFA46-6BCD-4779-8B49-DBF4102A4C4DQ48041597-C7C70090-9C83-4F1F-A11F-BA26F386DDDEQ48044333-4DE6D792-8B6D-4F43-89CF-510AF9108DD2Q48160518-EE5792F2-EF87-4613-9895-620B48DD5F16Q48371441-F4C30FE7-CDDC-4DC3-8F4D-7C26A4E2B1F5Q53346793-A849F6DD-515D-4EAA-9152-4B74A902D7B0Q84326261-D16439AB-1E5E-4266-A40F-DF4F094AA44BQ86709504-4B2FE188-E1AB-4D3A-85BB-0050FA37E2D8Q87002343-1F7808C8-D472-440D-B873-C76B14CDA113
P50
description
investigador
@es
researcher
@en
wetenschapper
@nl
name
Ruge Quhe
@en
Ruge Quhe
@nl
type
label
Ruge Quhe
@en
Ruge Quhe
@nl
prefLabel
Ruge Quhe
@en
Ruge Quhe
@nl
P31
P496
0000-0001-8991-8640